Low temperature perovskite crystallization of 70%PbMg1∕3Nb2∕3O3–30%PbTiO3 thin films deposited by sputtering and their electrical performance evaluation

PbMg1∕3Nb2∕3O3–PbTiO3 films were deposited on silicon by sputtering, followed by an annealing treatment. The authors demonstrate the pure perovskite phase may be obtained at very low temperature (400°C) without any pyrochlore phase. The existence of an interfacial layer of Pb2Nb2O7 structure is evidenced. They suggest that such phase serves as seed layer which promotes the apparition of the perovskite phase. The permittivity of the films annealed at 450°C is high (600) compared to most dielectric materials obtained at this temperature. The electromechanic properties (d33=50pC∕m) are also suitable for microelectromechanical system applications with a thermal treatment compatible with the above integrated circuits.