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Interface Roughness Produced by Nitrogen Atom Incorporation at a SiO_2/Si(100) Interface : Semiconductors
Interface Roughness Produced by Nitrogen Atom Incorporation at a SiO_2/Si(100) Interface : Semiconductors
2001
Kouta Inoue
Keita Furuno
Hirohisa Kato
Naoyoshi Tamura
Kenichi Hikazutani
Seiji Sano
Takeo Hattori
Keywords:
Analytical chemistry
Nitrogen
Physics
Scanning probe microscopy
Semiconductor
Surface finish
Crystallography
Atom
X-ray photoelectron spectroscopy
nitrogen atom
Correction
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