H/sub 2/O-TEOS plasma-CVD realizing dielectrics having a smooth surface

The authors have grown planarized dielectrics by plasma-enhanced chemical vapor deposition from an H/sub 2/O and Si(OC/sub 2/H/sub 5/)/sub 4/ (tetraethylorthosilicate: TEOS) gas system (H/sub 2/O-TEOS PLASMA-CVD). The grown dielectrics have smooth surfaces similar to spin-on-glass (SOG) films, and fill grooves down to 0.2 mu m in width. This paper reports characteristics and planarization mechanism of H/sub 2/O-TEOS PLASMA-CVD dielectrics. >