Radiation Induced Detrapping of Implanted Deuterium in BeO by High Energy exp.3_He and Proton Irradiation

Abstract BeO layers formed on Be are implanted with 5 keV deuterium ions and the amount of gas retained is determined using the D( 3 He, H) 4 He nuclear reaction. Detrapping of the retained deuterium by 790 keV 3 He and 2.2 MeV H bombardment is measured at temperatures between 140 and 470 K and detrapping cross sections are determined. The maximum detrapping yields found are 17 D/ 3 He and 0.8 D/H. The results indicate that the observed radiation induced detrapping is caused by electronic excitation.