RF-sputtered PZT thin films for infrared sensor arrays

Abstract PZT thin films prepared by RF sputtering of a ceramic target of composition Pb(Zr0.25, Ti0.75)O3, show different textures with respect to sputtering conditions adopted. The films prepared were under high stress as shown by the stress measurements. PZT micro-structures with Pt electrodes sputtered on silicon wafers were investigated using the Raman peak of the single crystalline silicon. The Raman shift profiles were found to be dependent on the particular geometry of the investigated structures. Infrared sensor arrays described in this paper were fabricated with multitarget sputtered I μm PZT thin films. The array with 256 sensitive elements exhibits a noise equivalent power (NEP) of 0.42 nW at 20 Hz.