Plasma-Enhanced Combustion-Processed Al 2 O 3 Gate Oxide for In 2 O 3 Thin Film Transistors

In this study, we describe how to obtain high-quality Al 2 O 3 dielectric thin films and their implementation in In 2 O 3 thin film transistors by combining plasma treatment and combustion process at low temperatures (250 °C). The single layer Al 2 O 3 dielectric formed by this technique exhibited a higher areal capacitance and a lower leakage level compared with those of conventional solution-processed Al 2 O 3 . The resulting TFTs presented a superior electrical performance at a low operating voltage of 2 V, with a positive threshold voltage of 0.39 V, a subthreshold swing of 0.V/decade, an On/Off ratio of 1.8×104, and a superior mobility of 136 cm2 V−1 s−1.