High-Accuracy Two-Dimensional Intentional Non-Uniform Dose Implant: MIND 2.0

Two-dimensional (2D) dose control is becoming well accepted for semiconductor device fabrication. At the same time, two specialized versions are arising; (1) High accuracy intentional non-uniform dose implant with relatively moderate dynamic dose range and (2) High dynamic dose range intentional non-uniform implant with relatively moderate dose accuracy. Sumitomo Heavy Industries Ion Technology (SMIT) has developed two-dimensional intentional non-uniform dose-implant methods for both demands. A method to carry out a highdynamic- range 2D non-uniform dose implant will be presented at this conference. In this paper, the method to carry out high-accuracy intentional 2D non-uniform implants (MIND 2.0) will be reported. The MIND 2.0 system has been installed on SMIT's hybrid-scan single-wafer ion implanters. In order to obtain intentional non-uniform dosage, beam scanning patterns must be modified. For a high-accuracy intentional 2D non-uniform dose implant, an iterative method which includes actual dose-pattern checks has been implemented in MIND 2.0. In this way, appropriate beam scanning patterns for intended twodimensional non-uniform dose patterns are always obtained, no matter what a beam size is.