Blue and green InGaN/GaNµLED arrays with different LED chip sizes were fabricated and tested in IVL system. As the chip size reduces, the current density at peak efficiency increases gradually for both blue and green samples. The current efficiency of the smaller µLED is lower than that of the bigger one.
In this article, we propose and investigate a GaN-based trench metal–insulator–semiconductor barrier Schottky rectifier with a beveled mesa and field plate (BM-TMBS). According to our study, the beveled mesa and field plate structures help to reduce the density of potential lines at the mesa corner and deplete the drift region in two-dimensional mode, respectively. By doing so, the electric field at the bottom corner of the trenches and Schottky contact/GaN interface can be decreased significantly and the breakdown voltage can also be improved remarkably when compared with the conventional TMBS rectifiers and the planar Schottky barrier diodes. Meanwhile, assisted by the beveled mesa structure, the improved current spreading effect and a better conductivity modulation can be obtained in the forward-conduction state. Our studies also show that the electric field profiles and charge-coupling effect can be influenced by the mesa angle, the insulating layer thickness (Tox), and the trench depth (Dtr). As a result, the optimized BM-TMBS rectifiers can obtain a high BV of ∼2 kV and a current density of ∼3 kA/cm2 at the forward bias of 2 V.
The hole injection capability is essentially important for GaN-based vertical cavity surface emitting lasers (VCSELs) to enhance the laser power. In this work, we propose GaN-based VCSELs with the p-AlGaN/p-GaN structure as the p-type hole supplier to facilitate the hole injection. The p-AlGaN/p-GaN heterojunction is able to store the electric field and thus can moderately adjust the drift velocity and the kinetic energy for holes, which can improve the thermionic emission process for holes to travel across the p-type electron blocking layer (p-EBL). Besides, the valence band barrier height in the p-EBL can be reduced as a result of usage of the p-AlGaN layer. Therefore, the better stimulated radiative recombination rate and the increased laser power are obtained, thus enhancing the 3 dB frequency bandwidth. Moreover, we also investigate the impact of the p-AlGaN/p-GaN structure with various AlN compositions in the p-AlGaN layer on the hole injection capability, the laser power, and the 3 dB frequency bandwidth.
Layered 5d transition metal oxides (TMOs) have attracted significant interest in recent years because of the rich physical properties induced by the interplay between spin-orbit coupling, bandwidth and on-site Coulomb repulsion. In Sr2IrO4, this interplay opens a gap near the Fermi energy and stabilizes a Jeff=1/2 spin-orbital entangled insulating state at low temperatures. Whether this metal-insulating transition (MIT) is Mott-type (electronic-correlation driven) or Slater-type (magnetic-order driven) has been under intense debate. We address this issue via spatially resolved imaging and spectroscopic studies of the Sr2IrO4 surface using scanning tunneling microscopy/spectroscopy (STM/S). The STS results clearly illustrate the opening of the (~150-250 meV) insulating gap at low temperatures, in qualitative agreement with our density-functional theory (DFT) calculations. More importantly, the measured temperature dependence of the gap width coupled with our DFT+dynamical mean field theory (DMFT) results strongly support the Slater-type MIT scenario in Sr2IrO4. The STS data further reveal a pseudogap structure above the Neel temperature, presumably related to the presence of antiferromagnetic fluctuations.
Due to the increased surface-to-volume ratio, the surface recombination caused by sidewall defects is a key obstacle that limits the external quantum efficiency (EQE) for GaN-based micro-light-emitting diodes (µLEDs). In this work, we propose selectively removing the periphery p + -GaN layer so that the an artificially formed resistive ITO/p-GaN junction can be formed at the mesa edge. Three types of LEDs with different device dimensions of 30 × 30 µm 2 , 60 × 60 µm 2 and 100 × 100 µm 2 are investigated, respectively. We find that such resistive ITO/p-GaN junction can effectively prevent the holes from reaching the sidewalls for µLEDs with smaller size. Furthermore, such confinement of injection current also facilitates the hole injection into the active region for µLEDs. Therefore, the surface-defect-caused nonradiative recombination in the edge of mesa can be suppressed. Meantime, a reduction of current leakage caused by the sidewall defects can also be obtained. As a result, the measured and calculated external quantum efficiency (EQE) and optical output power for the proposed LED with small sizes are increased.
Blue and green InGaN/GaN μLED arrays with different LED chip sizes were fabricated and tested in IVL system. As the chip size reduces, the current density at peak efficiency increases gradually for both blue and green samples. The current efficiency of the smaller μLED is lower than that of the bigger one.
The wall-voltage loss in PDPs with four different types of protective layers, i.e., undoped MgO, Si-doped MgO, Sc-doped MgO, and MgCaO (15%) plasma, are compared. Using a two-electrode opposed-discharge-type PDP, the change in external panel voltage needed to get a new discharge is measured as a function of the waiting time from 5 μs to 50 ms, the number of sustain cycles (1-1024), and the sustain frequency. The results shows that the wall-voltage loss cannot only be caused by amplified exoemission but that dielectric relaxation effects might also play an important role.
We report the generation of multiple soliton self-frequency shift cancellations in a temporally tailored tellurite photonic crystal fiber (PCF). The temporally regulated group velocity dispersion (GVD) is generated in the fiber by soliton induced optical Kerr effect. Two red-shifted dispersive waves spring up when two Raman solitons meet their own second zero-dispersion-wavelengths in the PCF. These results show how, through temporally tailored GVD, nonlinearities can be harnessed to generate unexpected effects.
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