C. Leroux

University of Virginia

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G. Ghibaudo

Institut de Microélectronique, Electromagnétisme et Photonique

G. Reimbold

CEA Grenoble

X. Garros

Université Grenoble Alpes

F. Martín

CEA LETI

Matthew Charles

CEA LETI

Edwige Bano

Institut polytechnique de Grenoble

Jérôme Mitard

IMEC

R. Gassilloud

CEA LETI

M. Cassé

Université Grenoble Alpes

P. Caubet

STMicroelectronics (France)

Cooperative Institutions

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

224

CEA LETI

224

CEA Grenoble

215

Institut polytechnique de Grenoble

213

Université Grenoble Alpes

212

Centre National de la Recherche Scientifique

118

STMicroelectronics (France)

117

Direction de la Recherche Technologique

Institut de Microélectronique, Electromagnétisme et Photonique

STMicroelectronics (Czechia)

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Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices

C. Suarez-Segovia C. Leroux Florian Domengie K. Dabertrand V. Joseph

In this paper, the impact of metallic lanthanum (La) deposited by Radio-Frequency PVD on effective work function (WF _eff ) of HfON-based NFET devices in a sacrificial metal gate-first approach is evaluated for the first time. Engineering of WF _eff towards N+ without leakage degradation is demonstrated by tuning both the pedestal TiN thickness and the as-deposited metallic La dose. WF _eff shift is related to a La-induced interfacial dipole (5), whose value has been correlated to the effective La dose into HfON/SiON stack after diffusion annealing, which has been accurately measured through a spectroscopic method based on La X-Ray Fluorescence (XRF).

Lanthanum

Metal gate

10.1109/essderc.2015.7324760

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Citations (8)

P-Type Niox Ultra-Thin Film as Highly Efficient Holes Extraction Layer in N-Type Pbs Quantum Dots Based Nir Photodiode

Louis David Mohgouk Zouknak M. Gros‐Jean Serge BLONKOWSKI C. Leroux G. Ghibaudo

Recently, the development of zero-dimensional (0D) materials has experienced significant growth. Among them, PbS colloidal quantum dots (CQDs) have received special attention due to their outstanding properties, including tunable optical absorption ranging from 600 to 2600 nm (size dependent band gap), and easy solution synthesis. PbS CQDs are considered as one of the most promising materials for the next generation of infrared sensors. Hence, there is a growing interest in their use in industrial spheres. One of the major keys to obtaining high-performance devices, is the realization of efficient charge extraction contacts on PbS CQDs films. In this work, we have demonstrated an efficient holes extraction layer (HEL) using NiOx ultra-thin film on infrared p-i-n photodiode based on only n-type PbS nanocrystals (CQDs). We compared the performance with the standard optimized MoOx. We obtained a significant gain in external quantum efficiency (EQE), a decrease of the operating bias, while keeping the same dark current level.

Photodiode

Ultra violet

Thin layers

10.2139/ssrn.4429234

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Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique

J. Lehmann C. Leroux G. Reimbold Matthew Charles A. Torres

In this paper, we present a new method of sheet resistance measurement on AlGaN/GaN wafers. Such measurements are useful for an easy monitoring of AlGaN/GaN epitaxy. Measurements were obtained by adapting the four-point probe technique to AlGaN/GaN wafers. This method is used today in the 200mm GaN-on-Si fabrication line at the CEA-LETI with a standard deviation of 2% on the sheet resistance measurement.

Wide-bandgap semiconductor

10.1109/icmts.2015.7106134

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Citations (9)

Understanding reversal effects of metallic aluminum introduced in HfSiON/TiN PMOSFETs

Microelectronic Engineering (2011)

S. Baudot C. Leroux F. Chave R. Boujamaa E. Martínez

Metal gate

High-κ dielectric

Equivalent oxide thickness

Bevel

10.1016/j.mee.2011.03.124

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Citations (6)

Characterization of 2DEG in AlGaN/GaN heterostructure by Hall effect

Microelectronic Engineering (2017)

Iliass Nifa C. Leroux Alphonse Torres Matthew Charles D. Blachier

Characterization

10.1016/j.mee.2017.05.009

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Citations (15)

Light emission microscopy for reliability studies

Microelectronic Engineering (1999)

C. Leroux D. Blachier

10.1016/s0167-9317(99)00437-2

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Citations (14)

INDEPTHANALYSISOFVTINSTABILITIES INHFO2TECHNOLOGIESBYCHARGE PUMPING MEASUREMENTSAND ELECTRICALMODELING

X. Garros J. Mitard C. Leroux G. Reimbold

This paperinvestigates VTinstabilities inHfO2/TiN stacks from CP measurementsandelectrical modeling. CP measurements are wellcorrelated topulsed Idvgmeasurements andcanbeeasily used toobtain theVtinstability over a large scale oftimefrom0.1ps to fewsseconds. A complete modeling oftheCPandthepulsed IdVg measurements hasbeendonetolocalize spatially andenergetically thetrapsinHfO2.Themainbandofdefects responsible forVt instabilities was found at-0.9eV fromthe HfO2 conduction bandbut deep energylevels were also identified. Theimpact ofthedetrapping phenomena on CP measurements hasbeenfinally investigated. No influence ofdetrapping ofelectrons into thegatewas found. Andthe detrapping into thesubstrate during thehalf oftheaccycle atVg=1.5Visalmost complete forthetrapsfilled atlowVg.

Source

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Electrical and Chemical Properties of the HfO[sub 2]/SiO[sub 2]/Si Stack: Impact of HfO[sub 2] Thickness and Thermal Budget

Journal of The Electrochemical Society (2009)

E. Martínez C. Leroux Nicolas Benedetto C. Gaumer M. Charbonnier

In this paper, we investigate the impact of thermal budget and thickness on the chemical and electronic properties of the stack. High temperature anneal at induces both the regrowth and reoxidation of the interfacial layer. A bias drop of 1.1 eV is observed along the whole stack via the C 1s core-level shift and is ascribed both to the interfacial dipole and to fixed charges in . Electrical measurements suggest a dipole strength of 0.2 eV. Ellipsometry and UV photoelectron spectroscopy are combined to deduce the electron affinity . This value does not change with increasing thermal budget or dielectric thickness. The barrier height is estimated to be in agreement with previous internal photoemission results.

Ellipsometry

10.1149/1.3153126

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Citations (12)

Dynamic aging of CMOS SOI transistors in circuit operation

E. Guichard G. Reimbold S. Cristoloveanu C. Leroux D. Blachier

SOI transistors, operating in dynamic mode, have been fully investigated using dedicated test circuits. Indeed, specific circuits have been built in order to make, in-situ monitoring of electrical characteristics of n- and p-MOSFETs. We have demonstrated that physical mechanisms of the degradation, in partially depleted SOI devices, are comparable after static and dynamic stress. Indeed, back interface degradation analysis has revealed that, even after dynamic aging, p-MOSFETs are submitted to electron trapping while it is not the case for n-MOSFETs. The "quasi static" approach is not applicable in inverter-type circuit, and could be explained by successive injection of holes and electrons due to the specific bias waveform, leading to an enhancement of the degradation.

Degradation

10.1109/iedm.1995.499303

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Citations (4)

Dual phase TOSI-gate process on High-K dielectrics in a CMP-less flow

Proceedings of the European Solid State Device Research Conference (2006)

A. Mondot Markus Müller A. Talbot C. Vizioz Simone Pokrant

In this paper, we demonstrate for the first time a new original approach of the integration of dual phase totally silicided (TOSI) gates using a close-to-standard CMOS flow without any additional CMP step targeting the use of NiSi for NMOS and Ni ₂ Si for the PMOS gate electrode on high-k dielectrics. The impact of the TOSI-process on the gate stack characteristics is investigated in detail on capacitance, gate leakage and work function data. With respect to poly-Si gated devices we find a significant reduction of the effective oxide thickness in inversion without degradation of the gate leakage statistics. The results emphasize the potential of the integration of TOSI-gates on high-k gate oxides

High-κ dielectric

Leakage (economics)

Metal gate

10.1109/essder.2006.307652

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