Tanzhao Zhang

University of Science and Technology Beijing

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Trends

Author Order

Document Type

Co-Authors

Kangkang Meng

University of Science and Technology Beijing

Yong Jiang

Tianjin Polytechnic University

Xiaoguang Xu

University of Science and Technology Beijing

Yong Wu

University of Science and Technology Beijing

Jikun Chen

University of Science and Technology Beijing

Chexin Li

University of Science and Technology Beijing

Chunyue Dou

University of Science and Technology Beijing

Ang Li

Beijing University of Technology

Xiaoyi Zhao

Environment and Climate Change Canada

Mengxi Wang

Shaanxi University of Science and Technology

Cooperative Institutions

University of Science and Technology Beijing

Chinese Academy of Sciences

University of Chinese Academy of Sciences

Institute of Physics

Peking University

North China Electric Power University

Tsinghua University

Songshan Lake Materials Laboratory

Institute of High Energy Physics

Shanghai Jiao Tong University

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

Effect of disorder on anomalous Hall effect and spin Hall magnetoresistance in the ferrimagnetic film

Journal of Alloys and Compounds (2024)

Chunyue Dou Xiaoyi Zhao Xiaoguang Xu Ang Li Zhiqiang Zhu

Ferrimagnetism

Thermal Hall effect

10.1016/j.jallcom.2024.177674

Cite

Citations (0)

Strain-controlled current-induced magnetization switching in flexible spin-orbit torque device

Nano Research (2024)

Meiling Li Xiaoguang Xu Mengxi Wang Bin He Tanzhao Zhang

Strain (injury)

Orbit (dynamics)

Spin Current

10.26599/nr.2025.94907066

Cite

Citations (0)

Room‐Temperature Non‐Local Spin Transport in Few‐Layer Black Phosphorus Passivated with MgO (Adv. Electron. Mater. 7/2022)

Advanced Electronic Materials (2022)

Chexin Li Xiaoguang Xu Yingli Ma Bing Zhao Tanzhao Zhang

Black Phosphorus Passivated with MgO In article number 2101048, Chexin Li, Xiaoguang Xu, Yong Jiang, and co-workers report that black phosphorus (BP) is passivated from H2O and O2 by a thin oxide layer (MgO) which serves as the barrier at the same time to improve the efficiency of spin injection. The passivated BP-based non-local devices show good spin transport performance and are greatly simplified for real applications.

Black Phosphorus

10.1002/aelm.202270031

Cite

Citations (0)

The modulation of perpendicular magnetic anisotropy and spin–orbit toque in Pt/Co/Pt multilayers with interfacial decoration by insertion of a Bi layer

Journal of Physics D Applied Physics (2024)

Yong Wu Kaibin Wen Tanzhao Zhang Ye Liu Kangkang Meng

Abstract Bismuth is a well-known semimetal material with strong spin–orbit coupling and has been confirmed to exhibit a larger spin Hall angle in CuBi and PtBi alloys with low Bi-doping concentration. In this study, we investigated perpendicular magnetic anisotropy (PMA) and spin–orbit torques (SOTs) in Pt/Co/Pt multilayers by inserting a Bi layer with a thickness of 2 nm at the Co/Pt interface. Two types of PMA multilayers, Pt (3 nm)/Co (1 nm)/Pt (5 nm) and Pt (3 nm)/Co (1 nm)/Pt (1 nm), with different spin accumulations, were designed and prepared by varying the top Pt thickness. A significant enhancement of PMA and SOT efficiency is observed in the Pt (3 nm)/Co (1 nm)/Bi (2 nm)/Pt (5 nm) multilayer via a Bi-layer interfacial decoration. However, for the Pt (3 nm)/Co (1 nm)/Bi (2 nm)/Pt (1 nm) multilayers, both PMA and SOT efficiency decrease with decoration of the Bi layer at the Co/Pt interface. Meanwhile, the sign of SOTs changes in the Pt (3 nm)/Co (1 nm)/Pt (5 nm) and Pt (3 nm)/Co (1 nm)/Pt (1 nm) multilayers when introducing a Bi layer. This completely opposite behavior illustrates that the Bi/Pt interface plays an important role in modulating the PMA and SOT efficiency of Pt/Co/Bi/Pt multilayers. Optimizing the alloying of Bi/Pt could be an effective approach to increase the PMA and SOT efficiency of Pt/Co/Bi/Pt multilayers.

Modulation (music)

Orbit (dynamics)

Spin–orbit interaction

10.1088/1361-6463/ad32f0

Cite

Citations (0)

Revealing the high sensitivity in the metal toinsulator transition properties of the pulsed laser deposited VO2 thin films

Ceramics International (2021)

Xuanchi Zhou Yong Wu Fengbo Yan Tanzhao Zhang Xinyou Ke

Pulsed Laser Deposition

10.1016/j.ceramint.2021.05.283

Cite

Citations (12)

Room‐Temperature Non‐Local Spin Transport in Few‐Layer Black Phosphorus Passivated with MgO

Advanced Electronic Materials (2022)

Chexin Li Xiaoguang Xu Yingli Ma Bing Zhao Tanzhao Zhang

Abstract Black phosphorus (BP), a new member of 2D materials, is an ideal selection to construct spin‐based devices due to its tunable direct bandgap and high carrier mobility. Assembling van der Waals heterostructures is the most popular method to create spintronic devices for 2D materials, especially for the easily oxidized BP. However, it is too complicated to be realized for fabricating large‐scale integrated circuits in practical applications. To overcome this flaw, an oxide layer on BP simultaneously serving as the protection layer and barrier to fabricate a Co/MgO/BP‐based non‐local spin valve is employed. The non‐local spin signals demonstrate the diffusion of pure spin current in the BP channel, which is the direct evidence of the spin injection from Co into BP. Combining the Hanle precession measurements with the Bloch equation fitting, the spin transport parameters of the few‐layer BP can be extracted. The spin diffusion length λ s and spin relaxation time τ s are 6.15 µm and 241.7 ps, respectively. Therefore, the MgO layer in the non‐local spin valve can simplify the fabrication of 2D material‐based spintronic devices and accelerate their applications.

Spin valve

Spin diffusion

Spin pumping

10.1002/aelm.202101048

Cite

Citations (2)

The influence of MoS2 on perpendicular magnetic anisotropy and spin–orbit torque of Pt/Co/Pt multilayer

Applied Physics Letters (2023)

Chexin Li Xiaoguang Xu Tanzhao Zhang Zhiqiang Zhu Qianbiao Liu

Two-dimensional (2D) materials provide a wide choice for the next-generation spintronic devices at the post-Moore era. Here, we reveal the effect of the 2D transition metal dichalcogenide MoS2 on the perpendicular magnetic anisotropy (PMA) and spin–orbit torque (SOT) of the Pt/Co/Pt multilayer. MoS2 can distinctly enhance the PMA of Pt/Co/Pt multilayer, which shows no obvious dependence on the thickness of MoS2. Moreover, the magnetization of monolayer MoS2/Pt/Co/Pt can be switched under a small external magnetic field around 300 Oe and maintained up to 4000 Oe, verifying the enhanced PMA by MoS2. Interestingly, the SOT efficiency can also be increased about 9.65% by monolayer MoS2, which can be attributed to the spin absorption at the MoS2/Pt interface. Comparing the SOT behaviors of devices with different MoS2 thickness, the monolayer MoS2 is proved to be an ideal candidate for high-performance SOT devices.

10.1063/5.0155998

Cite

Citations (2)

Enhanced second harmonic Hall resistance in in-plane synthetic antiferromagnets

Applied Physics Letters (2022)

Libai Zhu Xiaoguang Xu Tanzhao Zhang Mengxi Wang Kangkang Meng

Synthetic antiferromagnet (SyAF) has been demonstrated to be an ideal candidate for spin–orbit torque (SOT) based spintronic devices. However, the detailed mechanism needs to be clarified due to the coexistence of multiple effects. This paper studies SOT and the thermoelectric effect in SyAF of Pt/Co/Ru/Co/Pt by harmonic Hall resistance measurements. Different from the traditional Co/Pt bilayers, the second harmonic Hall resistance signals of the SyAF-based devices are obviously enhanced under a large external magnetic field (Bext), which is caused by the antiferromagnetic exchange coupling fields weakening the influence of Bext. By fitting the Hall resistance curves, the field-like torque is demonstrated to be the main contribution to the Hall resistance. Interestingly, both the SOT effective fields are greatly enhanced for antiparallel alignment. This study separates the contributions of SOT and the thermoelectric effect in the SyAF structures and enables the design of the spintronic devices with stability under a large magnetic field.

Antiparallel (mathematics)

10.1063/5.0091605

Cite

Citations (1)

Unconventional magnetoresistive behavior near magnetic compensation temperature in ferrimagnetic Mn2.21Ru0.86Ga films

Applied Physics Letters (2022)

Chunyue Dou Xiaoguang Xu Ke Yang Chexin Li Tanzhao Zhang

Ferrimagnets with magnetic compensation temperature (Tcomp) around room temperature are desirable due to their potential applications in low-energy consuming and high-frequency spintronic devices. In this study, the Tcomp of ferrimagnetic Mn2.21Ru0.86Ga (MRG) is tuned to near room temperature by strain. Moreover, we observed unconventional magnetoresistance behaviors for MRG-based Hall bar devices near Tcomp. First-principles calculations suggest two kinds of Mn moments, which lead to two anomalous Hall channels with opposite signs and consequently correspond to the peak structure and triple loops of the anomalous Hall effect loops. The unconventional temperature dependence of longitudinal resistivity is caused by the combined effects of two types of Mn moments and the anisotropic magnetoresistance of the MRG film. Interestingly, the spontaneous Hall angle of the MRG film is calculated to be ∼2.2%, which is one order of magnitude larger than those of other 3d ferromagnets. Therefore, our study demonstrates MRG to be a ferrimagnet with the Tcomp near room temperature, which enables its potential applications in spintronic devices.

Ferrimagnetism

Colossal Magnetoresistance

10.1063/5.0123392

Cite

Citations (1)

The anomalous Hall effects and Rashba-Edelstein magnetoresistance in the ferrimagnetic Mn1.84Co0.46V0.86Al film

Research Square (Research Square) (2023)

Xiaoguang Xu Chunyue Dou Xiaoyi Zhao Zhiqiang Zhu Tanzhao Zhang

Abstract Ferrimagnets have attracted increasing attention in spintronics due to the possibility of easy manipulation by magnetic or electric fields. In this study, we report the anomalous Hall effect (AHE) and Rashba-Edelstein magnetoresistance (REMR) in the new ferrimagnetic Mn1.84Co0.46V0.86Al (MCVA) films. The anomalous Hall resistivity (ρxy) changes gradually from negative to positive values with increasing film thickness. By separating the contributions of AHE, it is demonstrated that the thickness dependence origins from the competition between the skew scattering contribution and the sum of the side jumping and intrinsic terms. Besides the intrinsic bulk effect of MCVA, the interface Rashba-Edelstein effect also obviously influences the transport property of MCVA-based devices due to interfacial spin-orbit coupling (SOC). As the magnetic field increasing, the magnetic moments of MCVA switch from collinear to non-collinear, resulting in an inversion of the REMR signal of MCVA/Al2O3 devices. The magnetic coupling state evolution in MCVA gives a pathway for signal inversion in REMR at interfaces without heavy metal layer, which provides valuable ideas for spintronic device design.

Ferrimagnetism

Rashba effect

10.21203/rs.3.rs-3323449/v1

Cite

Citations (0)