Baochun Wu

Tsinghua University

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Jinbo Yang

Peking University

Jing Lü

Peking University

Jie Yang

University of Science and Technology Liaoning

Shibo Fang

Peking University

Honglin Du

Peking University

Qiuhui Li

Peking University

Chen Yang

Peking University

Zhongchong Lin

Fujian Normal University

Yuxuan Peng

Peking University

Ruge Quhe

Beijing University of Posts and Telecommunications

Cooperative Institutions

Peking University

Collaborative Innovation Center of Quantum Matter

State Key Laboratory of Artificial Microstructure and Mesoscopic Physics

Chinese Academy of Sciences

University of Chinese Academy of Sciences

Institute of Physics

King University

University of Cambridge

Hunan University

Institute for Condensed Matter Physics of the National Academy of Sciences of Ukraine

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Polarization tunable bidirectional photoresponse in Van der Waals α−In2Se3/NbX2 (

Physical Review Materials (2023)

Shibo Fang Qiuhui Li Chen Yang Baochun Wu Shiqi Liu

Ferroelectric diodes can generate a polarization-controlled bidirectional photoresponse to simulate inhibition and promotion behaviors in the artificial neuromorphic system with fast speed, high energy efficiency, and nonvolatility. However, the existing ferroelectric diodes based on ferroelectric oxides suffer from a weak bidirectional photoresponse (below 1 mA/W), difficult miniaturization, and a large response photon energy (over 3 eV). Here, we design a series of van der Waals $\ensuremath{\alpha}\text{\ensuremath{-}}{\mathrm{In}}_{2}{\mathrm{Se}}_{3}\text{/}\mathrm{Nb}{X}_{2}$ ($X$ = S, Se, and Te) ferroelectric diodes with bidirectional photoresponse by using ab initio quantum transport simulation. These devices show a maximum bidirectional photoresponse of 30 (\ensuremath{-}19) mA/W and a minimum response photon energy of 1.3 eV at the monolayer thickness. Our work shows advanced optoelectronic applications of the van der Waals ferroelectric diodes in the future artificial neuromorphic system.

10.1103/physrevmaterials.7.084412

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Citations (4)

Performance Limit of Gate-All-Around Si Nanowire Field-Effect Transistors: An Ab Initio Quantum Transport Simulation

Physical Review Applied (2022)

Shiqi Liu Qiuhui Li Chen Yang Jie Yang Lin Xu

The gate-all-around (GAA) $\mathrm{Si}$ nanowire (NW) field-effect transistor (FET) is considered one of the most promising successors of the current mainstream $\mathrm{Si}$ fin FET (FinFET) owing to its better electrostatic gate control. Experimentally, the diameter of $\mathrm{Si}$ NWs has been scaled down to 1 nm. In this paper, the performance limit of the GAA $\mathrm{Si}$ NWFET with a 1-nm diameter is investigated by utilizing ab initio quantum transport simulations. We prove that the electrical conduction is concentrated in the core of the ultranarrow wire channel. The minimum gate length (${L}_{g}$) at which the n- and p-type GAA $\mathrm{Si}$ NWFET can satisfy the high-performance application requirements (on-state current, gate capacitance, delay time, and power dissipation) of the International Technology Roadmap for Semiconductors is 3 nm. The best-performing 5-nm-${L}_{g}$ n-type GAA $\mathrm{Si}$ NWFET exhibits an energy-delay product comparable with typical monolayer two-dimensional FETs. Compared with the similar-sized trigate $\mathrm{Si}$ NW FinFET, an approximately 200% increase in the on-state current and about 15% decrease in the subthreshold swing are witnessed in GAA $\mathrm{Si}$ NWFET at the same 5-nm ${L}_{g}$. Through strain engineering, about an 80% increase of on-state current is observed in the 5-nm-${L}_{g}$ p-type GAA $\mathrm{Si}$ NWFET. Our research demonstrates the vast potential of the GAA $\mathrm{Si}$ NWFET in the sub-3-nm gate-length region.

10.1103/physrevapplied.18.054089

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Multistate magnetic tunnel junction based on a single two-dimensional van der Waals antiferromagnet

Physical Review Applied (2024)

Jie Yang Baochun Wu Sichun Zhao Shiqi Liu Jing Lü

10.1103/physrevapplied.22.014017

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Citations (2)

Preparation, structure and magnetic properties of high-purity Mn4C

Journal of Magnetism and Magnetic Materials (2022)

Fanggui Wang Shaohua Fan Zhongchong Lin Baochun Wu Wenyun Yang

Ferrimagnetism

Melt spinning

Atmospheric temperature range

Magnetic structure

10.1016/j.jmmm.2022.170211

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Gate-tunable high magnetoresistance in monolayer Fe₃GeTe₂ spin valves

Physical Chemistry Chemical Physics (2020)

Jie Yang Ruge Quhe Shiqi Liu Yuxuan Peng Xiaotian Sun

Here we design a monolayer Fe₃GeTe₂ spin-valve device by attaching two ends to ferromagnetic electrodes. A high magnetoresistance of ~ 390% is obtained and significantly increased to 450 ~ 510% after the gates are introduced.

Spin valve

10.1039/d0cp03761c

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N - and P -type symmetric scaling behavior of monolayer hydrogenated boron arsenide transistors

Physical Review Materials (2024)

Qiuhui Li Tao Zheng Lin Xu Shibo Fang Zongmeng Yang

High thermal conductivity and ambipolar mobility are highly desirable for semiconductors in electronics and have been observed in bulk boron arsenide (BAs). In this work, we explore the scaling behavior of a monolayer hydrogenated BAs field-effect transistor (ML H-BAs FET) by employing ab initio quantum transport methods. Both the armchair- and zigzag-directed ML H-BAs FETs can well satisfy the requirements of the International Technology Roadmap for Semiconductors even if the gate length is scaled down to $2\ensuremath{\sim}3$ nm for high-performance applications. The excellent n- and $p\text{\ensuremath{-}}\mathrm{type}$ symmetry of bulk BAs is well preserved in the ML H-BAs FET along with the zigzag direction but is lost in the armchair direction. However, such asymmetry can be suppressed by applying uniaxial compressive strain owing to the broken valence band degeneracy. Our findings provide important theoretical insights into transport symmetry and the scaling behavior of ML H-BAs FETs.

10.1103/physrevmaterials.8.014603

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Citations (1)

Ferroelectric-Tunable Photoresponse in α- In2Se3 Photovoltaic Photodetectors: An Ab Initio Quantum Transport Study

Physical Review Applied (2023)

Shibo Fang Chen Yang Qiuhui Li Baochun Wu Linqiang Xu

Two-dimensional \ensuremath{\alpha}-${\mathrm{In}}_{2}{\mathrm{Se}}_{3}$ has drawn broad attention due to its high photoresponse and unique room-temperature interlocked in-plane and out-of-plane ferroelectricity with an ultralow switching electric field. Here, we investigate the photoresponse in a lateral monolayer (ML) \ensuremath{\alpha}-${\mathrm{In}}_{2}{\mathrm{Se}}_{3}$ p-i-n junction by using ab initio quantum transport simulations. The maximum photoresponses of the lateral \ensuremath{\alpha}-${\mathrm{In}}_{2}{\mathrm{Se}}_{3}$ p-i-n junction are up to 69.2 and 31.6 mA/W for the ferroelectric wurtzite and zincblende phases (shortly named WZ' and ZB') \ensuremath{\alpha}-${\mathrm{In}}_{2}{\mathrm{Se}}_{3}$, respectively, which are 8--17 times higher than that of the extensively researched graphene photodetector (4 mA/W). Remarkably, the ferroelectric photoresponses, defined as the photoresponse change ratio between the two ferroelectric states, of the lateral ML WZ' and ZB'-${\mathrm{In}}_{2}{\mathrm{Se}}_{3}$ photodetectors have average values of 127% and 121% with surprising maximum values of $2\ifmmode\times\else\texttimes\fi{}{10}^{6}\mathrm{%}$ and $1\ifmmode\times\else\texttimes\fi{}{10}^{7}\mathrm{%}$, respectively. The physical mechanism comes from the electron density redistribution altered by the atomic displacements due to the polarization switch, rather than the built-in potential change induced by the surface polarization charges. Such ferroelectric-tunable photoresponses in the \ensuremath{\alpha}-${\mathrm{In}}_{2}{\mathrm{Se}}_{3}$ photodetector suggest a potential in the fabrication of future optical detection and storage integrated devices.

10.1103/physrevapplied.19.024024

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Citations (8)

Zr substituted (Nd, Zr)(Fe, Co, Mo)12N compounds with high intrinsic magnetic properties

Materials Today Physics (2024)

Shaohua Fan Baochun Wu Hui-Dong Qian Yuanhua Xia Hao Li

10.1016/j.mtphys.2024.101348

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Citations (2)

Light-assisted Néel spin currents in PT -symmetric antiferromagnetic semiconductors

Physical review. B./Physical review. B (2024)

Shibo Fang Baochun Wu Qiuhui Li Zongmeng Yang Honglin Du

N\'eel spin current is defined as the staggered spin current across different magnetic sublattices and can manipulate the N\'eel vector of the antiferromagnet by its associated spin-transfer torques. Currently, it is believed that N\'eel spin currents are only generated through electrical driving in $\mathcal{PT}$-symmetric antiferromagnetic metals, which is a linear effect. In this paper, we propose that N\'eel spin currents can be induced through the nonlinear optical effect (spin photogalvanic effect) in $\mathcal{PT}$-symmetric antiferromagnetic semiconductors. Using CrSBr and ${\mathrm{CrI}}_{3}$ as representatives, we predict that light can generate N\'eel spin current in antiferromagnetic semiconductors, with both staggered and antiparallel spin currents distributed across different magnetic sublattices, depending on the $\mathcal{PT}$ symmetries of their corresponding spin photogalvanic coefficients. We show that the origin of the diverse manifestations of light-assisted N\'eel spin currents lies in the nonlinearity of the spin photogalvanic effect, resulting in the current not necessarily being the staggered spin current. Our work proposes a nonlinear effect that may have tremendous application potential in future antiferromagnetic devices.

10.1103/physrevb.109.085201

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Citations (1)

High‐Performance Spin Filters and Spin Field Effect Transistors Based on Bilayer VSe₂

Advanced Theory and Simulations (2020)

Baochun Wu Ruge Quhe Jie Yang Shiqi Liu Junjie Shi

Abstract Recently, two‐dimensional (2D) magnetic van der Waals materials have drawn great attention as they are remarkably promising in numerous vital areas, such as data storage and information processing. Theoretically, bilayer (BL) 2H‐VSe 2 has been predicted to be an A‐type 2D antiferromagnetic van der Waals crystal (intralayer ferromagnetism and interlayer antiferromagnetism) and to have electrically‐induced half‐metallicity. Herein, by using ab initio quantum transport simulations, BL 2H‐VSe 2 spin devices are designed and spin‐resolved transport properties are investigated for the first time. The spin‐filter efficiency (SFE) of the dual‐gated BL 2H‐VSe 2 spin filter reaches up to 99%, and the conductance on‐off ratio of this device is up to 10 6 . Also, the conductance on‐off ratio of the quadruple‐gated BL 2H‐VSe 2 spin field effect transistor can reach 4 × 10 3 after reversing the spin direction. This work shows the high performance of the BL 2H‐VSe 2 in spintronic devices and will motivate further studies of the spin devices based on this kind of material.

Spin transistor

10.1002/adts.202000238

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Citations (20)