Qiuhui LiTao ZhengLin XuShibo FangZongmeng YangLinqiang Xu英根 李Baochun WuXingyue YangRuge QuheYing GuoJing Lü
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High thermal conductivity and ambipolar mobility are highly desirable for semiconductors in electronics and have been observed in bulk boron arsenide (BAs). In this work, we explore the scaling behavior of a monolayer hydrogenated BAs field-effect transistor (ML H-BAs FET) by employing ab initio quantum transport methods. Both the armchair- and zigzag-directed ML H-BAs FETs can well satisfy the requirements of the International Technology Roadmap for Semiconductors even if the gate length is scaled down to $2\ensuremath{\sim}3$ nm for high-performance applications. The excellent n- and $p\text{\ensuremath{-}}\mathrm{type}$ symmetry of bulk BAs is well preserved in the ML H-BAs FET along with the zigzag direction but is lost in the armchair direction. However, such asymmetry can be suppressed by applying uniaxial compressive strain owing to the broken valence band degeneracy. Our findings provide important theoretical insights into transport symmetry and the scaling behavior of ML H-BAs FETs.Cite
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Our main purpose is to introduce the notion of almost α(Λ, sp)-continuous multifunctions. Moreover, some characterizations of almost α(Λ, sp)-continuous multifunctions are established.
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Porous SiC Ceramics with Multiple Pore Structure Fabricated via Gelcasting and Solid State Sintering
Porous SiC ceramics with multiple pore structures were fabricated via gelcasting and solid state sintering.A novel gelling agent of Isobam was applied and PMMA was used as both foam stabilizer and pore forming agent.The mechanical properties of porous SiC ceramics were investigated as functions of PMMA content, rotating speed of ball mill, and sintering temperature.With PMMA content increasing from 5wt% to 20wt%, the foaming effect was inhibited while the stability of bubbles increased.When the rotating speed was 220 r/min, the open porosities of the as-prepared SiC ceramics sintered at 2100 varied ℃ from 51.5% to 72.8%, and compressive strength varied from 7.9 to 48.2 MPa.With the rotating speed increasing from 220 to 280 r/min, the foaming effect was aggravated and the porosities of SiC ceramics sintered at 2100 increased.℃ While the sintering temperature increasing from 2050 to 2150 , ℃ the SiC ceramics prepared with PMMA content of 20wt% at rotating speed of 220 r/min decreased in the open porosities while increased in compressive strength.
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Nanocrystalline material
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