Mi Jang

Inha University

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Hoichang Yang

Inha University

Se Hyun Kim

Konkuk University

Chan Eon Park

Pohang University of Science and Technology

Nae‐Eung Lee

Sungkyunkwan University

Mingyuan Pei

Inha University

Jae Kyeong Jeong

Hanyang University

Yun‐Hi Kim

Gyeongsang National University

Minjung Lee

Electronics and Telecommunications Research Institute

Joongyu Ahn

Inha University

Rino Choi

Inha University

Cooperative Institutions

Government of the Republic of Korea

Seoul National University

Inha University

Samsung (South Korea)

Pohang University of Science and Technology

Sungkyunkwan University

Korea Advanced Institute of Science and Technology

Korea Institute of Science and Technology

Seoul Institute

Korea University

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Fluorocopolymers: Balancing Surface Hydrophobicity and Polarizability of Fluorinated Dielectrics for Organic Field-Effect Transistors with Excellent Gate-Bias Stability and Mobility (Adv. Mater. Interfaces 15/2016)

Advanced Materials Interfaces (2016)

Mi Jang Minjung Lee Hwanho Shin Joongyu Ahn Mingyuan Pei

Mi Jang, Minjung Lee, and co-workers clearly demonstrate how much the balancing surface hydrophobicity and polarizability of gate dielectrics is important to achieve excellent environmental, gate-bias stability, and mobility of organic field-effect transistors, specifically, based on pentacene layers grown on hydrophobicity-controlled fluorinated copolymer-treated dielectrics in article 1600284.

Pentacene

10.1002/admi.201670068

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Citations (1)

Enhancement of protein detection performance in field-effect transistors with polymer residue-free graphene channel

Carbon (2013)

Jin Heak Jung Il Yung Sohn Duck Jin Kim Bo Yeong Kim Mi Jang

Residue (chemistry)

10.1016/j.carbon.2013.05.069

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Citations (18)

Structural Control Over Self-Assembled Crystals of π-Conjugated Poly(3,3‴-didodecyl-quaterthiophene) for Organic Field-Effect Transistor Applications

Journal of Nanoscience and Nanotechnology (2012)

Mi Jang Hoichang Yang

Liquid-crystalline (LC) poly(3,3'''-didodecyl-quaterthiophene) (PQT-12) was investigated to optimize its side alkyl ordering and pi-conjugated structure for high performance organic field-effect transistor (OFET) applications. Initially, low-crystal films spun-cast on OTS-treated SiO2 substrates were further crystallized via either thermal or solvent treatments. At temperatures (125-138 degrees C) driving a LC state of PQT-12, mobile chains were better migrated into preformed crystals. The resulting films showed highly crystal nanofibrils, in which pi-conjugated polymer backbones (with an conjugated backbone spacing, d(010) of 3.80 A) and the orientation of self-assembled side-chains were tilted with respect to the film surface, respectively. However, via melting or solvent exposure providing isotropic states, film crystallization generated less ordered crystals with randomly oriented side-chains, increasing d(010) up to 4.16 A. As a result, the usage of LC characteristic allowed us to consistently achieve the desirable crystal structure of PQT-12 and to robustly obtain high field-effect mobility for FET applications.

Side chain

Crystal (programming language)

Organic field-effect transistor

10.1166/jnn.2012.4578

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Citations (4)

A Physicochemical Approach Toward Extending Conjugation and the Ordering of Solution-Processable Semiconducting Polymers

ACS Applied Materials & Interfaces (2016)

Minjung Lee Hyeonyeol Jeon Mi Jang Hoichang Yang

Poly(3-hexylthiophene)s (P3HTs) were synthesized with a well-controlled molecular weight (Mw) and degree of regioregularity; additionally, π-conjugated P3HT structures in both solutions and films were systematically investigated. Conjugated P3HT phases in spin-cast films significantly changed from ordered nanorods, -fibrils, and -ribbons to less-ordered granules, depending on the conformation of the P3HT chains in solutions. The chain conformations could be physicochemically adjusted by modifying chain lengths (from 5 to 45 kDa), solvents, and ultrasonication. Highly extended conformations of the P3HT in ultrasound-treated solutions yielded longer degree of conjugation both the intra- and intermolecularly. When toluene was used as a marginal solvent, ultrasonicated 0.1 wt % 29 kDa P3HT solutions could be used to yield highly ordered aggregates in spin-cast films, including nanoribbons or nanosheets, with field-effect mobility (μFET) up to ∼0.1 cm2 V–1 s–1 being measured for organic field-effect transistors (OFETs). However, ultrasonicated chloroform systems with good P3HT solubility (for P3HT Mw ≥ 20 kDa) yielded featureless conducting layers even at 0.4 wt % P3HT content. However, these film-based OFETs yielded μFET values up to 0.04 cm2 V–1 s–1, which were much greater than 0.004 cm2 V–1 s–1 for the nonultrasonicated systems.

10.1021/acsami.5b12552

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Citations (18)

Complementary photo and temperature cured polymer dielectrics with high-quality dielectric properties for organic semiconductors

Journal of Materials Chemistry (2012)

Se Hyun Kim Mi Jang Jiye Kim Harim Choi Kyung‐Youl Baek

Photo and temperature cured polymer dielectrics could be fabricated on a gate-patterned glass, with two immiscible polymer precursors, divinyltetramethyldisiloxane-bis(benzocyclobutene) (BCB precursor) and poly(melamine-co-formaldehyde)acrylate (PMFA), which have excellent insulating properties, but show discernible dielectric constants and polarities. On hydrophobic BCB-assisted PMFA blend dielectrics (approximately 400 nm thick), organic field-effect transistors (OFET) and complementary inverters were demonstrated using pentacene and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13) as semiconducting channels. The values of field-effect mobilities showed up to 0.33 cm2 V−1 s−1 (for pentacene) and 0.85 cm2 V−1 s−1 (for PTCDI-C13), respectively. In addition, these based complementary inverter was successfully demonstrated with a high voltage gain of ca. 41, specifically, onto the 10 wt% BCB-assisted PMFA dielectric optimized to achieve a hydrophobic and smooth surface by vertically phase-separating the immiscible polymers.

Pentacene

Organic field-effect transistor

Benzocyclobutene

Organic semiconductor

10.1039/c2jm33203e

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Citations (16)

Improved Electrical Properties of Solution-Processed ZrO₂ Gate Dielectric for Large-Area Flexible Electronics

Japanese Journal of Applied Physics (2013)

Musarrat Hasan Mi Jang Dong-Hyoub Kim Manh Cuong Nguyen Hoichang Yang

Zirconium oxide (ZrO 2 ), which has high dielectric constant, was investigated for application in flexible electronics. When the spun-cast film was annealed at a low temperature, the electrical properties were not encouraging because residual organic particles remained at the dielectric. To address this problem we used plasma annealing at a reasonably low temperature and achieved improved dielectric properties such as lower leakage current, higher dielectric constant, and better reliability. Auger depth profile spectroscopy results suggested reduction of carbon percentage at the dielectric. We demonstrated device application by fabricating transistor device with an organic channel layer. The transistor electrical properties were encouraging, exhibiting an electron mobility of 0.3 cm 2 /(V·s). The results were very promising and suggest that ZrO 2 could be applied to all-printed electronic devices in the near future.

High-κ dielectric

Auger electron spectroscopy

Flexible Electronics

Zirconium dioxide

10.7567/jjap.52.100206

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Citations (7)

Effect of pentacene–dielectric affinity on pentacene thin film growth morphology in organic field-effect transistors

Journal of Materials Chemistry (2010)

Se Hyun Kim Mi Jang Hoichang Yang Chan Eon Park

Organic field-effect transistors (OFETs) are fabricated by depositing a thin film of semiconductor on the functionalized surface of a SiO2 dielectric. The chemical and morphological structures of the interface between the semiconductor and the functionalized dielectric are critical for OFET performance. We have characterized the effect of the affinity between semiconductor and functionalized dielectric on the properties of the semiconductor–dielectric interface. The crystalline microstructure/nanostructure of the pentacene semiconductor layers, grown on a dielectric substrate that had been functionalized with either poly(4-vinyl pyridine) or polystyrene (to control hydrophobicity), and grown under a series of substrate temperatures and deposition rates, were characterized by X-ray diffraction, photoemission spectroscopy, and atomic force microscopy. By comparing the morphological features of the semiconductor thin films with the device characteristics (field-effect mobility, threshold voltage, and hysteresis) of the OFET devices, the effect of affinity-driven properties on charge modulation, charge trapping, and charge carrier transport could be described.

Pentacene

Organic field-effect transistor

Organic semiconductor

Hysteresis

10.1039/b921371f

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Citations (63)

Instantaneous Pulsed-Light Cross-Linking of a Polymer Gate Dielectric for Flexible Organic Thin-Film Transistors

ACS Applied Materials & Interfaces (2017)

Soo Jin Kim Mi Jang Hee Yeon Yang Jinhan Cho Ho Sun Lim

We report the instantaneous pulsed-light cross-linking of polymer gate dielectrics on a flexible substrate by using intensely pulsed white light (IPWL) irradiation. Irradiation with IPWL for only 1.8 s of a poly(4-vinylphenol) (PVP) thin film with the cross-linking agent poly(melamine-co-formaldehyde) (PMF) deposited on a plastic substrate was found to yield fully cross-linked PVP films. It was confirmed that the IPWL-cross-linked PVP films have smooth pinhole-free surfaces and exhibit a low leakage current density, organic solvent resistance, and good compatibility with organic semiconductor, and that they can be used as replacements for typical PVP dielectrics that are cross-linked with time and energy intensive thermal heating processes. The synchronization of the IPWL irradiation with substrate transfer was found to enable the preparation of cross-linked PVP films on large area substrates with a highly uniform capacitance. Flexible OTFT based on IPWL-cross-linked PVP dielectrics were found to exhibit good electrical performance that is comparable to that of devices with thermally cross-linked PVP dielectric, as well as excellent deformation stability even at a bending radius of 3 mm.

Organic Electronics

Organic semiconductor

10.1021/acsami.6b14957

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Citations (32)

Organic Field‐Effect Transistors: Critical Factors to Achieve Low Voltage‐ and Capacitance‐Based Organic Field‐Effect Transistors (Adv. Mater. 2/2014)

Advanced Materials (2014)

Mi Jang Ji Hoon Park Seongil Im Se Hyun Kim Hoichang Yang

10.1002/adma.201470007

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Citations (0)

Solution Processed High-k Lanthanide Oxides for Low Voltage Driven Transparent Oxide Semiconductor Thin Film Transistors

ECS Transactions (2011)

Sungho Choi Byung-Yoon Park Mi Jang Sunho Jeong Ji-Yoon Lee

ZnO-based low power operating thin film transistors (TFTs) were fabricated by a simple and robust solution process. Combined the amorphous oxide semiconductors with the high capacitance lanthanide oxides thin film, Y2O3 and Gd2O3, as a gate insulator, the resultant device exhibits an enhanced device performance; lower threshold voltage, increased carrier mobility, and smaller subthreshold slope with exceptionally low operating voltage than the typical TFT devices using a SiO2 gate insulator.

Subthreshold conduction

Subthreshold slope

10.1149/1.3572327

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Citations (3)