Organic Field‐Effect Transistors: Critical Factors to Achieve Low Voltage‐ and Capacitance‐Based Organic Field‐Effect Transistors (Adv. Mater. 2/2014)
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The authors fabricated an organic nanochannel field-effect transistor (FET) that is self-wired with highly conductive organic conductors. The advantages of the transistor are a short channel (approximately 400nm in length) and spontaneous formation of an active layer of the FET. Further, in principle, the carrier-injection barrier is absent at the interface of the organic metal and organic semiconductor. Thus, the transistor is highly conductive despite the narrow cross section of the channel. The FET characteristics of the nanochannel transistor exhibit the n-channel enhancement mode behavior.
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Floating gate field-effect transistors (FETs) for the detection of extracellular signals from electrogenic cells were fabricated in a complementary metal oxide semiconductor process. Additional passivation layers protected the transistor gates from the electrolyte solution. To compare the signals from n- and p-FETs, two electronically separated, but locally adjacent transistors were combined to one measuring unit. The paired sensing area of this unit had the dimension of a single cell. Simultaneous recordings with n- and p-channel floating gate FETs from a single cell exhibited comparable amplitudes and identical time courses. The experiments indicate that both types of FETs express similar sensitivities.
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