In this paper, the effect of boron implantation at doses of 9⋅10 14 cm -2 on the deep-level spectra of polycrystalline CdTe films doped with silver is considered. It was found that boron implantation results in the formation of radiation defects in the region close to the surface of 0.2 μm. It was determined that the location of deep local levels, the activation energy of which is equal to Ec-1.15 eV, is located in the intercrystal barriers. The implanted CdTe: Ag layers are thermally treated for 30 min at a temperature of 100⁰C and the restoration of the barriers in these layers is shown: the interlayer grows and the concentration of levels participating in the photovoltage increases. Heating of non-implanted layers under the same conditions does not affect the shape of the primacy absorption spectra, but only increases its value in its own region by 1.4 times, i.e. heating improves the barriers only in the implanted layers.
This paper discusses the effective role of temperature in improving the electrical conductivity and thermoelectric power of n-PbTe films obtained by high-temperature evaporation. It has been established that an increase in the substrate temperature to 350-370 0С leads to an increase in thermopower and electrical conductivity due to an increase in the diffusion process, leading to an increase in blocks. It is found that the thermoelectric parameters strongly depend on the film thickness.
Photoelectric and current-voltage characteristics of solar elements based on heterojunctions of p-CdTe-n-CdS and p-CdTe-n-CdSe pellicles with deep impurity level are considered in the article. It is noted that the photosensitivity of heterostructures is significantly improved when Ag and Cu alloys are added to CdTe pellicles and approaches the infrared region of the spectrum. Clearly, the deep impurity level in CdTe has an activation energy equal to Ec=1,15 eV.
In this work, the kinetic phenomena of strain-sensitive thin PbTe films with the presence of chlorine are studied. It has been established that when adding a legirant, the concentration of current carriers and the mobility increase 1.9*10 20 cm -3 , Ϭ max = 4959 ohm -1 sm -1 , respectively. It has been determined that the coefficient of strain sensitivity of polycrystalline PbTe films doped with chlorine reaches up to 35000 in the strain range (1÷8.5)·10-7 rel.un.
This article discusses the creation of optical sensors for detecting polluted air based on the pCdTe – nCdS and pCdTe – nCdSe heterostructures. It was established that the developed optical sensors, with an automatic control system using Arduino, operate effectively across wide ranges of the infrared (IR) spectrum. The study found that the increased responsiveness of the optical sensor ensures uniform sensitivity and a high degree of background light suppression. It was demonstrated that using the optical sensor, it is possible to determine the level of dust and smoke in both indoor environments and open land areas.
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