Hybrid (organic-oxide) photovoltaic device performance is highly dependent on the nature and quality of the organic-oxide interface. This work investigates the details of interfacial morphology in terms of the molecular order of poly(3-hexylthiophene) (P3HT) at the planar interface with zinc oxide (ZnO) formed by pulsed laser deposition. Resonant Raman spectroscopy is employed as a powerful morphological probe for conjugated polymers to reveal that the interfacial P3HT is disrupted during the deposition process whereas the bulk polymer shows an increase in molecular order. External quantum efficiency measurements of P3HT:ZnO bilayer devices show that this disordered P3HT region is active in photocurrent generation.
A significant volume of literature exists that describe minor changes in composition and/or microstructure in perovskite solar cells (PSCs) as the driving force for incremental improvements in device performance. Many authors cite crystallinity as a fundamental driver of performance improvements, yet often do so without quantitatively defining crystallinity or, importantly, addressing the important questions behind their observations. Here I will discuss two recent case studies where processing modifications have been investigated as a means of controllably varying active layer crystallinity and describe the impact on device performance. i) We demonstrate the impact of active layer crystallinity on the accumulated charge and open-circuit voltage (Voc) in solar cells based on methylammonium lead triiodide (CH3NH3PbI3,MAPI). We show that MAPI crystallinity can be systematically tailored by modulating the stoichiometry of the precursor mix, where a small excess of methylammonium iodide (MAI) improves crystallinity increasing device Voc by ~200 mV and, in parallel, that the photoluminescence (PL) yield increases 15x, indicative of a suppression of non-radiative recombination pathways. This is coupled with the development of crystallographic texture (110) in the MAPI. In-situ transient optoelectronic measurements of the charge concentration in PSCs under operation suggest that the concentration of trapped charges (either at interfaces or in the bulk) is some 5x lower at matched Voc. We believe these trap states originate in/near the disordered or amorphous areas between MAPI crystallites, resulting at least in part from orientation mismatch between crystalline domains. ii) Secondly, we identify previously unobserved nanoscale defects residing within individual grains of solution processed MAPI thin films. Using scanning transmission electron microscopy (STEM) we identify the defects to be inherently associated with the established solution-processing methodology and introduce a facile processing modification to eliminate such defect formation. Specifically, defect elimination is achieved by co-annealing the as deposited MAPI layer with the electron transport layer PCBM resulting in devices that significantly outperform devices prepared using the established methodology, achieving PCE increases from 13.6 % to 17.7 %. The use of TEM allows us to correlate the performance enhancements to improved intra-grain crystallinity and show that highly coherent crystallographic orientation results within individual grains when processing is modified. Detailed optoelectronic characterization reveals that the improved intra-grain crystallinity drives an improvement of charge collection, a reduction of surface recombination at the MAPI/PCBM interface and a change in the density of local sub-gap states.
A systematic study of the effect of the zinc oxide (ZnO) electrodeposition parameters (concentration, temperature, potential and pH) on film morphology, thickness, transparency, roughness and crystallographic orientation is presented with the view of producing optimized thin, planar, and continuous ZnO films for photovoltaic applications. Electrochemical measurements of the deposition charge as a function of time are used to understand the mechanism of nucleation and textured growth. Continuous thin films of crystalline ZnO are obtained at temperatures below 100 °C without the need for subsequent annealing. The formation of continuous films is favoured by high concentrations of Zn2+ precursor (> 100 mM), high temperature (> 70 °C) and low potentials (< −1.1 V/AgAgCl). A low bulk solution pH is shown to be a key factor in obtaining thin continuous films and the crystallographic orientation of these films can also be controlled by the deposition parameters. The importance of orientation and thickness control on device performance is shown by using the electrodeposited films as electron extracting interlayers in a model organic photovoltaic system.
The Front Cover shows a scanning electron microscopy image of lanthanum-treated TiO2 nanofibers rendered to show a three-dimensional representation of the nanostructured solar cell. This work shows that the addition of lithium and lanthanum cations causes minimal substitutional or interstitial doping of TiO2 nanofibers. More information can be found in the Article by F. Ambroz et al. on page 3590 in Issue 14, 2019 (DOI: 10.1002/celc.201900532).
Abstract The synthesis and characterization of copper (I) selenocyanate (CuSeCN) and its application as a solution‐processable hole‐transport layer (HTL) material in transistors, organic light‐emitting diodes, and solar cells are reported. Density‐functional theory calculations combined with X‐ray photoelectron spectroscopy are used to elucidate the electronic band structure, density of states, and microstructure of CuSeCN. Solution‐processed layers are found to be nanocrystalline and optically transparent (>94%), due to the large bandgap of ≥3.1 eV, with a valence band maximum located at −5.1 eV. Hole‐transport analysis performed using field‐effect measurements confirms the p‐type character of CuSeCN yielding a hole mobility of 0.002 cm 2 V −1 s −1 . When CuSeCN is incorporated as the HTL material in organic light‐emitting diodes and organic solar cells, the resulting devices exhibit comparable or improved performance to control devices based on commercially available poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate as the HTL. This is the first report on the semiconducting character of CuSeCN and it highlights the tremendous potential for further developments in the area of metal pseudohalides.
Coplanar radio frequency Schottky diodes based on solution-processed C60 and ZnO semiconductors are fabricated via adhesion-lithography. The development of a unique asymmetric nanogap electrode architecture results in devices with a high current rectification ratio (103–106), low operating voltage (<3 V), and cut-off frequencies of >400 MHz. Device fabrication is scalable and can be performed at low temperatures even on plastic substrates with very high yield. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
Antisolvent-assisted spin coating has been widely used for fabricating metal halide perovskite films with smooth and compact morphology. However, localized nanoscale inhomogeneities exist in these films owing to rapid crystallization, undermining their overall optoelectronic performance. Here, we show that by relaxing the requirement for film smoothness, outstanding film quality can be obtained simply through a post-annealing grain growth process without passivation agents. The morphological changes, driven by a vaporized methylammonium chloride (MACl)-dimethylformamide (DMF) solution, lead to comprehensive defect elimination. Our nanoscale characterization visualizes the local defective clusters in the as-deposited film and their elimination following treatment, which couples with the observation of emissive grain boundaries and excellent inter- and intragrain optoelectronic uniformity in the polycrystalline film. Overcoming these performance-limiting inhomogeneities results in the enhancement of the photoresponse to low-light (<0.1 mW cm-2) illumination by up to 40-fold, yielding high-performance photodiodes with superior low-light detection.