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K. Flessner
K. Flessner
Leakage (electronics)
Boron
Engineering
Oxide
Ion implantation
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A study of boron doping profile control for a low V/sub t/ device used in the advanced low power, high speed mixed-signal IC
1998
ASMC | Advanced Semiconductor Manufacturing Conference
A. Chen
K. Flessner
P. Sana
R. Dixon
F Malone
P. Ying
L. Hütter
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