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G. Tessmer
G. Tessmer
General Electric
Optoelectronics
Electron mobility
Thin film
Superlattice
Atomic physics
2
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Material and Device Characteristics of MBE Microwave Power FETs with Buffer Layers Grown at Low Temperature (300°C)
1991
MRS Proceedings
J. M. Ballingall
Pin Ho
R.P. Smith
S. C. Wang
G. Tessmer
T. Yu
E. L. Hall
Gudrun Hutchins
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