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D. I. Lubyshev

8

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Production of next generation InP-HBT epiwafers by MBE

2003 IPRM | International Conference on Indium Phosphide and Related Materials
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Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers

2002 Journal of Vacuum Science & Technology B
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The individual subband densities and mobilities in delta -doped GaAs at different temperatures

1993 Semiconductor Science and Technology
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Hole traps in indium-doped and indium-free GaAs grown by molecular beam epitaxy

1992 Semiconductor Science and Technology
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Pure source for molecular-beam epitaxy

1987
- D. I. Lubyshev
- V. P. Migal
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