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M. Matys
M. Matys
Hokkaido University
Physics
Wide-bandgap semiconductor
Condensed matter physics
Optoelectronics
Electron mobility
5
Papers
60
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Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors
2018
Journal of Applied Physics
M. Matys
Kenya Nishiguchi
B. Adamowicz
J. Kuzmik
Tamotsu Hashizume
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Citations (2)
Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors
2017
Journal of Applied Physics
M. Matys
S Kaneki
Kenya Nishiguchi
B. Adamowicz
Tamotsu Hashizume
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Citations (8)
Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition
2017
Applied Physics Letters
M. Matys
R. Stoklas
Michal Blaho
B. Adamowicz
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Citations (9)
Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures
2016
Journal of Applied Physics
M. Matys
R. Stoklas
J. Kuzmik
B. Adamowicz
Zenji Yatabe
Tamotsu Hashizume
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Citations (15)
On the origin of interface states at oxide/III-nitride heterojunction interfaces
2016
Journal of Applied Physics
M. Matys
B. Adamowicz
A. Domanowska
A. Michalewicz
R. Stoklas
Masamichi Akazawa
Zenji Yatabe
Tamotsu Hashizume
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Citations (26)
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