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takanasi yosifumi
takanasi yosifumi
Radiochemistry
Chemistry
Plasma
Chromatography
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In 0.75 Ga 0.25 As/In 0.53 Ga 0.47 As同一基板上に作製したPMSM-PDの応答特性 | 文献情報 | J-GLOBAL 科学技術総合リンクセンター
2011
nisio ketu
koreeda yuuta
yamazaki youiti
watanabe akira
taguti hirohisa
takanasi yosifumi
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Plasma Activated Sintering法によるAgドープMg 2 Siの熱電特性評価
2007
nakazawa naoto
chuanshangzhuangyi
Benduxin Song
chibanchangbao
iida tutomu
takanasi yosifumi
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InAlAs/InGaAs HEMTのドレインコンダクタンスの周波数依存性
2005
murakami hiroaki
hayakawa man takasi
nakamura sati
taguti hirohisa
iida tutomu
takanasi yosifumi
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FeGa 3 およびRuGa 3 の熱電特性
2003
amaya yasutaka
yamamoto atusi
Lee C.H.
takazawa hiroyuki
noguti teruo
kohara haruhiko
iida tutomu
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InP/InGaAs HBTへの保護膜形成に伴う表面再結合電流
1993
fukano hideki
takanasi yosifumi
tengbenzhengyou
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