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G. Whittemore

Axcelis Technologies

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Cost-Effective Low $V_{t}$ Ni-FUSI CMOS on SiON by Means of Al Implant (pMOS) and $\hbox{Yb}{+}\hbox{P}$ Coimplant (nMOS)

2008 IEEE Electron Device Letters
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Achieving low V T Ni-FUSI CMOS via lanthanide incorporation in the gate stack

2007 ESSDERC | European Solid-State Device Research Conference
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