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Katsuhiro Suma
Katsuhiro Suma
Mitsubishi
Electronic engineering
Dram
Electrical engineering
Silicon on insulator
Computer science
8
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98
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Halbleiterspeichereinrichtung mit einer Redundanzzeile und einer Redundanzspalte, auf die vor einer Ersetzung zugegriffen werden kann
1996
Katsuhiro Suma
Yasuhiko Tsukikawa
Masaki Tsukude
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Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's (Special Issue on ULSI Memory Technology)
1996
IEICE Transactions on Electronics
Yasuo Yamaguchi
Toshiyuki Oashi
Takahisa Eimori
Toshiaki Iwamatsu
S. Miyamoto
Katsuhiro Suma
Takahiro Tsuruda
Fukashi Morishita
Masakazu Hirose
Hideto Hidaka
Kazutami Arimoto
Kazuyasu Fujishima
Yasuo Inoue
Tadashi Nishimura
Hirokazu Miyoshi
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Leakage mechanism due to floating body and countermeasure on dynamic retention mode of SOI-DRAM
1995
VLSIT | Symposium on VLSI Technology
Fukashi Morishita
Katsuhiro Suma
Masakazu Hirose
Takahiro Tsuruda
Yasuo Yamaguchi
Takahisa Eimori
Toshiyuki Oashi
Kazutami Arimoto
Yasuo Inoue
T. Nishimura
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Citations (29)
An SOI-DRAM with wide operating voltage range by CMOS/SIMOX technology
1994
ISSCC | International Solid-State Circuits Conference
Katsuhiro Suma
Takahiro Tsuruda
Hideto Hidaka
Takahisa Eimori
Toshiyuki Oashi
Yasuo Yamaguchi
Toshiaki Iwamatsu
Masakazu Hirose
Fukashi Morishita
Kazutami Arimoto
Kazuyasu Fujishima
Yasuo Inoue
Tadashi Nishimura
Tsutomu Yoshihara
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Citations (41)
Highly reliable testing of ULSI memories with on-chip voltage-down converters
1993
IEEE Design & Test of Computers
Masaki Tsukude
Kazutami Arimoto
Hideto Hidaka
Yasuhiro Konishi
Masanori Hayashikoshi
Katsuhiro Suma
Kazuyasu Fujishima
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Citations (2)
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