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C.-P. Cheng

National Chiayi University

5

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41

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Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum

2019 Journal of Crystal Growth
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Interfacial perfection for pushing InGaAs and Ge MOS device limits (invited)

2018 ICSICT | IEEE International Conference on Solid-State and Integrated Circuit Technology
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SiC formation by C60 molecules as a precursor: A synchrotron-radiation photoemission study of the carbonization process

2006 Journal of Vacuum Science and Technology
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Photoemission study of CaF2 on Si(001)-2×1 during annealing

2003 Solid State Communications
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Early nucleation on the Si(0 0 1)-2 × 1 surface

2002 Surface Science
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Citations (15)