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M.Y. Kao
M.Y. Kao
Martin Marietta Materials, Inc.
Gallium arsenide
Physics
Electrical engineering
Optoelectronics
Electronic engineering
6
Papers
105
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60 GHz power performance of 0.1 /spl mu/m gate-length InAlAs/InGaAs HEMTs
1994
IPRM | International Conference on Indium Phosphide and Related Materials
Pin Ho
P.M. Smith
K.C. Hwang
S.C. Wang
M.Y. Kao
P.C. Chao
S.M.J. Liu
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Citations (9)
E-beam re-aligned HBTs and a new broadband MMIC power amplifier using bathtub as heat sink
1994
IEDM | International Electron Devices Meeting
L.W. Yang
J.J. Komiak
M.Y. Kao
D.E. Houston
D.P. Smith
K.J. Norheden
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Citations (6)
A reliable ECR passivation technique on the 0.1 /spl mu/m InAlAs/InGaAs HEMT device
1994
IPRM | International Conference on Indium Phosphide and Related Materials
K.C. Hwang
A.R. Reisinger
K.H.G. Duh
M.Y. Kao
P.C. Chao
P. Ho
A.W. Swanson
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Citations (10)
HEMT degradation in hydrogen gas
1994
IEEE Electron Device Letters
P.C. Chao
M.Y. Kao
Karen J. Nordheden
A.W. Swanson
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Citations (65)
Manufacturing technology for high performance HBT linear power amplifiers
1994
IEEE Gallium Arsenide Integrated Circuit Symposium
L.W. Yang
J.J. Komiak
D.P. Smith
M.Y. Kao
R.S. Brozovich
Karen J. Nordheden
D.R. Helms
D.E. Houston
F.R. Bardsley
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Citations (5)
1