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Hajime Shirai

Tokyo Institute of Technology

20

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277

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Low temperature growth of ZnSxSe1-x alloys fabricated by hydrogen radical enhanced chemical vapor deposition in an atomic layer epitaxy mode

1993 Journal of Applied Physics
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Low-temperature growth of ZnSe-based pseudomorphic structures by hydrogen-radical-enhanced chemical vapor deposition

1992 Journal of Crystal Growth
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Stability and hole-transport in a-Si:H prepared by chemical annealing

1991 Journal of Non-crystalline Solids
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A novel preparation technique for preparing hydrogenated amorphous silicon with a more rigid and stable Si network

1991 Applied Physics Letters
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Structural relaxation on growing surface during network formation of a-Si:H and a-SiGex:H by chemical annealing

1991 Journal of Non-crystalline Solids
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Very Stable a-Si:H Prepared by “Chemical Annealing”

1991 Japanese Journal of Applied Physics
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Control of Chemical Reactions for Growth of Crystalline Si at Low Substrate Temperature

1989 MRS Proceedings
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Atomic hydrogen improves the rigidity of Si-network and tail states at the valence band in a-Si:H and a-Si:H(F) films

1989 Journal of Non-crystalline Solids
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Growth of amorphous, microcrystalline and epitaxial silicon at the same substrate temperature under control of atomic hydrogen

1989 Journal of Non-crystalline Solids
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Growth Kinetics for Propagation of Si-Network

1989 MRS Proceedings
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Citations (2)