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Chikashi Ohshige

Kwansei Gakuin University

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Structural and Electrical Characterization of the Initial Stage of Physical Vapor Transport Growth of 4H-SiC Crystals

2015 Materials Science Forum
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Structural investigation of the seeding process for physical vapor transport growth of 4H–SiC single crystals

2014 Journal of Crystal Growth
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Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-Axis

2014 Materials Science Forum
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Defect formation during the initial stage of physical vapor transport growth of 4H–SiC in the [112¯0] direction

2014 Journal of Crystal Growth
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