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Hye-Jin Jin
Hye-Jin Jin
Yonsei University
Optoelectronics
Materials science
Transistor
Field-effect transistor
Non-volatile memory
4
Papers
17
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0
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Ambipolar Channel p-TMD/n-Ga 2 O 3 Junction Field Effect Transistors and High Speed Photo-sensing in TMD Channel
2021
Advanced Materials
Won-Jun Choi
Jongtae Ahn
Kitae Kim
Hye-Jin Jin
Sungjae Hong
Do Kyung Hwang
Seongil Im
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Citations (2)
High Performance β‐Ga 2 O 3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS 2 and TaS 2
2021
Advanced Functional Materials
Kitae Kim
Hye-Jin Jin
Won-Jun Choi
Yeonsu Jeong
Hyung Gon Shin
Yangjin Lee
Kwanpyo Kim
Seongil Im
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2D MoS 2 Charge Injection Memory Transistors Utilizing Hetero‐Stack SiO 2 /HfO 2 Dielectrics and Oxide Interface Traps
2021
Advanced electronic materials
Livia Janice Widiapradja
Taewook Nam
Yeonsu Jeong
Hye-Jin Jin
Yangjin Lee
Kwanpyo Kim
Sang Yoon Lee
Hyungjun Kim
Heesun Bae
Seongil Im
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Citations (1)
Nonvolatile and Neuromorphic Memory Devices Using Interfacial Traps in Two-Dimensional WSe2/MoTe2 Stack Channel.
2020
ACS Nano
Sam Park
Yeonsu Jeong
Hye-Jin Jin
Jun Kyu Park
Hyenam Jang
Sol Lee
Woong Huh
Hyunmin Cho
Hyung Gon Shin
Kwanpyo Kim
Chul-Ho Lee
Shinhyun Choi
Seongil Im
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Citations (10)
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