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Masafumi Tamura
Masafumi Tamura
Osaka University
Leakage (electronics)
Silicon oxynitride
Analytical chemistry
Plasma
Materials science
3
Papers
5
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Ultrathin silicon oxynitride formed by low-energy electron impact plasma nitridation and chemical oxidation methods
2003
Journal of Applied Physics
Masao Takahashi
Masafumi Tamura
Asuha
Takuya Kobayashi
Hikaru Kobayashi
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Citations (4)
Improvement of electrical characteristics of silicon oxynitride layers by a platinum method
2002
Applied Surface Science
Toshiko Mizokuro
Masafumi Tamura
Toshiro Yuasa
Takuya Kobayashi
Osamu Maida
Masao Takakashi
Hikaru Kobayashi
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Ultrathin Silicon Oxynitride Layers with a Low Leakage Current Density Formed by Plasma Nitridation Using Low Energy Electron Impact and Chemical Oxidation
2001
The Japan Society of Applied Physics
Masao Takahashi
Masafumi Tamura
Akira Asano
Osamu Maida
Hikaru Kobayashi
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