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Lingzi Zhang

Chinese Academy of Sciences

7

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30

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Wavelength-Tunable Si-Based InGaAs Resonant Cavity Enhanced Photodetectors Using Sol-Gel Wafer Bonding Technology

2011 IEEE Photonics Technology Letters
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InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm

2011 Chinese Physics B
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Highly efficient 1.53 mu m luminescence in ErxYb2-xSi2O7 thin films grown on Si substrate

2011 Materials Letters
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Highly efficient 1.53 m luminescence in Er xYb 2-xSi 2O 7 thin films grown on Si substrate

2011 Materials Letters
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High performance of silicon-based resonant-cavity-enhanced (RCE) photodetectors using sol-gel bonding

2010 GFP | International Conference on Group IV Photonics
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ELECTRICAL PROPERTIES OF LAYER STRUCTURED BI4Ti3O12 FERROELECTRICS WITH W6+ DOPING

2006 Integrated Ferroelectrics
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In situ characterization of domain structure and local elasticity in Nb-doped Bi4Ti3O12 ceramics by Scanning Probe Microscopy

2005 Materials Letters
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Citations (7)