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V. Khemka

Rensselaer Polytechnic Institute

15

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328

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Al/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction Rectifiers

2000 Materials Science Forum
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SiC and GaN bipolar power devices

2000 Solid-state Electronics
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Breakdown Voltage Improvement of 4H-SiC Schottky Diodes by a Thin Surface Implant

2000 Materials Science Forum
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Static and dynamic characteristics of a 1100 V, double-implanted, planar, 4H-SiC PiN rectifier

1999 ISPSD | International Symposium on Power Semiconductor Devices and IC's
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Characterization of phosphorus implantation in 4H-SiC

1999 Journal of Electronic Materials
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Design considerations and experimental analysis for silicon carbide power rectifiers

1999 Solid-state Electronics
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Phosphorus-implanted high-voltage n/sup +/p 4H-SiC junction rectifiers

1998 ISPSD | International Symposium on Power Semiconductor Devices and IC's
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Comparison of aluminum- and boron-implanted vertical 6H-SiC p+n junction diodes

1998 Solid-state Electronics
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Voltage Handling Capability and Microwave Performance of a 4H-SiC MESFET - A Simulation Study

1998 Materials Science Forum
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Effect of reactive ion etch-induced damage on the performance of 4H-SiC Schottky barrier diodes

1998 Journal of Electronic Materials
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Citations (34)