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Hidehiko Oku
Hidehiko Oku
Epitaxy
Crystallography
Physics
Nucleation
Optoelectronics
6
Papers
34
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Crack-free GaN grown by using maskless epitaxial lateral overgrowth on Si substrate with thin SiC intermediate layer
2014
Physica Status Solidi (a)
Hao Fang
M. Katagiri
Hideto Miyake
Kazumasa Hiramatsu
Hidehiko Oku
Hidetoshi Asamura
Keisuke Kawamura
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Properties of GaN grown on Si(111) substrates dependent on the thickness of 3C-SiC intermediate layers
2014
Journal of Applied Physics
Hao Fang
M. Katagiri
Hideto Miyake
Kazumasa Hiramatsu
Hidehiko Oku
Hidetoshi Asamura
Keisuke Kawamura
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Realization of Maskless Epitaxial Lateral Overgrowth of GaN on 3C-SiC/Si Substrates
2013
Japanese Journal of Applied Physics
Hao Fang
Yoshifumi Takaya
Hideto Miyake
Kazumasa Hiramatsu
Hidehiko Oku
Hidetoshi Asamura
Keisuke Kawamura
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Citations (6)
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