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Y. T. Chen
Y. T. Chen
SEMATECH
Electronic engineering
Physics
Dielectric
Gallium arsenide
Capacitance
4
Papers
21
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III–V gate stack interface improvement to enable high mobility 11nm node CMOS
2012
VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
Y. T. Chen
J. Huang
J. Price
P. Lysaght
D. Veksler
C. Weiland
Joseph C. Woicik
G. Bersuker
Richard Hill
Jungwoo Oh
P. D. Kirsch
R. Jammy
J. C. Lee
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Challenges of III–V materials in advanced CMOS logic
2012
VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
P. D. Kirsch
R.J.W. Hill
J. Huang
Wei-Yip Loh
Tae-Woo Kim
Man Hoi Wong
Byoung Gi Min
C. Huffman
D. Veksler
Chadwin D. Young
K.-W. Ang
I. Ali
Rinus T. P. Lee
T. Ngai
A. Wang
Wei-E Wang
T.H. Cunningham
Y. T. Chen
P.Y. Hung
E. Bersch
B. Sassman
M. Cruz
S. Trammell
R. Droopad
S. Oktybrysky
J. C. Lee
G. Bersuker
C. Hobbs
R. Jammy
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Citations (3)
Quantification of interfacial state density (Dit) at the high-k/III-V interface based on Hall effect measurements
2012
Journal of Applied Physics
D. Veksler
P. Nagaiah
T. Chidambaram
R. Cammarere
Vadim Tokranov
Michael Yakimov
Y. T. Chen
J. Huang
Niti Goel
Jungwoo Oh
G. Bersuker
C. Hobbs
P. D. Kirsch
S. Oktyabrsky
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Citations (14)
Interface states at high- к /InGaAs interface: H 2 O vs. O 3 based ALD dielectric
2011
DRC | Device Research Conference
Himanshu Madan
D. Veksler
Y. T. Chen
J. Huang
Niti Goel
G. Bersuker
Suman Datta
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Citations (4)
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