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D. D. Edwall

Rockwell International

28

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Dynamics of arsenic diffusion in metalorganic chemical deposited HgCdTe on GaAs/Si substrates

2008
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Mode of arsenic incorporation in HgCdTe grown by MBE

1997 Journal of Electronic Materials
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P-type doping of double layer mercury cadmium telluride for junction formation

1995 Journal of Electronic Materials
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Dynamics of arsenic diffusion in metalorganic chemical vapor deposition HgCdTe on GaAs/Si substrates

1991 Journal of Vacuum Science & Technology B
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Minority carrier lifetimes of metalorganic chemical vapor deposition long‐wavelength infrared HgCdTe on GaAs

1991 Journal of Vacuum Science & Technology B
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p on n ion‐implanted junctions in liquid phase epitaxy HgCdTe layers on CdTe substrates

1987 Applied Physics Letters
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Variable temperature Hall effect on p-Hg1−XCdXTe grown on CdTe and sapphire substrates by liquid phase epitaxy

1985 Journal of Electronic Materials
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Gamma ray detectors with HgCdTe contact layers

1985 Applied Physics Letters
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Liquid phase epitaxial growth of large area Hg1−xCdxTe epitaxial layers

1984 Journal of Applied Physics
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VIC-2 high performance photodiodes of mercury cadmium telluride (HgCdTe) on sapphire

1983 IEEE Transactions on Electron Devices
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