Old Web
English
Sign In
Acemap
>
authorDetail
>
Se Geun Park
Se Geun Park
Samsung
Electronic engineering
Dram
Materials science
Optoelectronics
Threshold voltage
5
Papers
2
Citations
0
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (3)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
Suppression of boron diffusion using carbon co-implantation in DRAM
2016
Materials Research Bulletin
Suk Hun Lee
Se Geun Park
Shin Deuk Kim
Hyuck-Chai Jung
Il Gweon Kim
Dong-Ho Kang
Dae-Jung Kim
Kyu Pil Lee
Joo-Sun Choi
Jung Woo Baek
Moonsuk Choi
Yongkook Park
Changhwan Choi
Jin-Hong Park
Show All
Source
Cite
Save
Citations (0)
New charge trapping phenomena in Recessed-Channel-Array-Transistor (RCAT) after Fowler-Nordheim stress
2008
ICICDT | International Conference on IC Design and Technology
Sung-young Lee
Se Geun Park
Samjin Hwang
Jaeeun Jeon
Wonshik Lee
Show All
Source
Cite
Save
Citations (0)
The New Technology for DRAM Cell Transistor with S-RCAT and its Size Effect
2005
The Japan Society of Applied Physics
Se Geun Park
Ji Young Kim
Yong Il Kim
Ho Jin Oh
Won Suk Lee
Ji-Hye Kim
Sung Eui Kim
Myoung-Sub Shim
Kyu-Pil Lee
Yong Jik Park
Won-Shik Lee
Byoung-Il Ryu
Yong-Han Roh
Show All
Source
Cite
Save
Citations (0)
1