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Changnam Park
Changnam Park
Samsung
Electronic engineering
Computer science
Static random-access memory
Extreme ultraviolet lithography
Scaling
4
Papers
28
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24.3 A Voltage and Temperature Tracking SRAM Assist Supporting 740mV Dual-Rail Offset for Low-Power and High-Performance Applications in 7nm EUV FinFET Technology
2019
ISSCC | International Solid-State Circuits Conference
Inhak Lee
Hanwool Jeong
Sangyeop Baeck
Siddharth Gupta
Changnam Park
Dong-Wook Seo
Jaesung Choi
Jae Young Kim
Hoon Kim
Jungmyung Kang
Sunyung Jang
Daeyoung Moon
Sangshin Han
Tae-hyung Kim
Jaehyun Lim
Young-Hwan Park
Hyejin Hwang
Jeonseung Kang
Jae-Seung Choi
Taejoong Song
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A 7nm FinFET SRAM using EUV lithography with dual write-driver-assist circuitry for low-voltage applications
2018
ISSCC | International Solid-State Circuits Conference
Taejoong Song
Jong-Hoon Jung
Woojin Rim
Hoonki Kim
Yongho Kim
Changnam Park
Jeongho Do
Sunghyun Park
Sungwee Cho
Hyun-Taek Jung
Bongjae Kwon
Hyun-su Choi
Jae-Seung Choi
Jong Shik Yoon
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Citations (18)
Half-and-Half Compare Content Addressable Memory with Charge-Sharing Based Selective Match-Line Precharge Scheme
2018
VLSIC | Symposium on VLSI Circuits
Woong Choi
Jongsun Park
Hoonki Kim
Changnam Park
Taejoong Song
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Citations (7)
12.2 A 7nm FinFET SRAM macro using EUV lithography for peripheral repair analysis
2017
ISSCC | International Solid-State Circuits Conference
Taejoong Song
Hoonki Kim
Woojin Rim
Yongho Kim
Sunghyun Park
Changnam Park
Minsun Hong
Giyong Yang
Jeongho Do
Jinyoung Lim
Seung-Young Lee
Ingyum Kim
Sang-hoon Baek
Jong-Hoon Jung
Dae-Won Ha
Hyung-Soon Jang
Taejung Lee
Chul-Hong Park
Bongjae Kwon
Hyun-Taek Jung
Sungwee Cho
Yongjae Choo
Jae-Seung Choi
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Citations (3)
1