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Jean-Paul Barnes

European Automobile Manufacturers Association

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Impact of UV Nanosecond Laser Annealing on Composition and Strain of Undoped Si0.8Ge0.2 Epitaxial Layers

2019 ECS Journal of Solid State Science and Technology
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Very Low Temperature Epitaxy of Heavily In Situ Phosphorous Doped Ge Layers and High Sn Content GeSn Layers

2017 ECS Journal of Solid State Science and Technology
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Very Low Temperature Epitaxy of Heavily In-situ Phosphorous Doped Ge Layers and High Sn Content GeSn Layers

2016
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Analysis of High Aspect Ratio through Silicon via (TSV) Diffusion and Stress Impact Profile during 3D Advanced Integration

2014
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