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Saito Shinsaku

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A Non-Volatile Content Addressable Memory Using Three-Terminal Magnetic Domain Wall Motion Cells

2012
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Low Current Perpendicular Domain Wall Motion Cell for Scalable High-Speed MRAM

2009 Technical report of IEICE. ICD
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A 4-Mb MRAM macro comprising shared write-selection transistor cells and using a leakage-replication read scheme

2008 Asian Solid-State Circuits Conference
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