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H. Mitsuzono
H. Mitsuzono
High-κ dielectric
Optoelectronics
algan gan
Breakdown voltage
Materials science
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Analysis of Dependence of Breakdown Voltage on Gate-Drain Distance in AlGaN/GaN HEMTs With High-k Passivation Layer
2021
IEEE Transactions on Electron Devices
R. Tomita
S. Ueda
T. Kawada
H. Mitsuzono
K. Horio
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