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Sanghyun Ju
Sanghyun Ju
Samsung
Electronic engineering
NAND gate
Flash memory
Communication channel
nand flash memory
2
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12
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DIBL-Induced Program Disturb Characteristics in 32-nm NAND Flash Memory Array
2011
IEEE Transactions on Electron Devices
Myounggon Kang
Wook-ghee Hahn
Il Han Park
Ju Young Park
Youngsun Song
Ho-Cheol Lee
Changgyu Eun
Sanghyun Ju
Kihwan Choi
Young-Ho Lim
Seunghyun Jang
Seongjae Cho
Byung-Gook Park
Hyungcheol Shin
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Citations (8)
A Simple compact model for hot carrier injection phenomenon in 32 nm NAND flash memory device
2010
EDSSC | International Conference on Electron Devices and Solid-State Circuits
Myounggon Kang
Wook-ghee Hahn
Il Han Park
Ho-Cheol Lee
Ju Young Park
Youngsun Song
Changgyu Eun
Sanghyun Ju
Kihwan Choi
Young-Ho Lim
Jong-Ho Lee
Byung-Gook Park
Hyungcheol Shin
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Citations (4)
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