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L. A. Domínguez
L. A. Domínguez
University of Valladolid
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Admittance parameters
Admittance
Resistive random-access memory
Materials science
5
Papers
14
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Control of the set and reset voltage polarity in anti-series and anti-parallel resistive switching structures
2019
Microelectronic Engineering
Héctor García
L. A. Domínguez
Helena Castán
Salvador Dueñas
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Citations (2)
Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters
2018
Journal of Applied Physics
H. Castán
S. Dueñas
H. García
O. G. Ossorio
L. A. Domínguez
B. Sahelices
E. Miranda
Mireia Bargallo Gonzalez
F. Campabadal
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Citations (11)
The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal–Insulator–Metal (MIM) Devices for Memory Applications
2018
Journal of Electronic Materials
Salvador Dueñas
Helena Castán
Héctor García
O. G. Ossorio
L. A. Domínguez
Helina Seemen
Aile Tamm
Kaupo Kukli
Jaan Aarik
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Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices
2017
DCIS | Conference on Design of Circuits and Integrated Systems
Salvador Dueñas
Helena Castán
Oscar G. Ossorio
L. A. Domínguez
Héctor García
Kristjan Kalam
Kaupo Kukli
Mikko Ritala
Markku Leskelä
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Admittance memory cycles of Ta 2 O 5 -ZrO 2 -based RRAM devices
2017
DCIS | Conference on Design of Circuits and Integrated Systems
S. Dueñas
H. Castán
O. G. Ossorio
L. A. Domínguez
H. García
Kristjan Kalam
Kaupo Kukli
Mikko Ritala
M. Leskelä
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