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Y. Arango
Y. Arango
IBM
Optoelectronics
Materials science
Electrical engineering
Communication channel
Silicon carbide
5
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20
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Surge current capability of 6.5kV-rated SiC MOSFETs
2020
ISPSD | International Symposium on Power Semiconductor Devices and IC's
A. Mihaila
C. Liu
G. Romano
E Bianda
Stephan Wirths
Y. Arango
Lars Knoll
A. Baschnagel
B. Boksteen
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Vertical Power SiC MOSFETs with High-k Gate Dielectrics and Superior Threshold Voltage Stability
2020
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Stephan Wirths
Y. Arango
Andrei Mihaila
Marco Bellini
G. Romano
Giovanni Alfieri
Manuel Belanche
Lars Knoll
Enea Bianda
Elena Mengotti
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6.5kV Silicon Carbide MOSFETs with 5kV RB safe operating area and MOS-channel surge capability
2020
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Y. Arango
G. Romano
A. Mihaila
Marco Bellini
C. Liu
P. Steimer
Stephan Wirths
Lars Knoll
E Bianda
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Planar 1.2kV SiC MOSFETs with retrograde channel profile for enhanced ruggedness
2019
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Lars Knoll
A. Mihaila
Stephan Wirths
Y. Arango
Alyssa Prasmusinto
Enea Bianda
Lukas Kranz
M. Bellini
G. Romano
Charalampos Papadopoulos
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Electrogates for stop-and-go control of liquid flow in microfluidics
2018
Applied Physics Letters
Y. Arango
Yuksel Temiz
Onur Gökçe
Emmanuel Delamarche
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Citations (12)
1