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Ying Trickett
Ying Trickett
Electronic engineering
Electrical resistivity and conductivity
Optoelectronics
Physics
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5
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25
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Statistical demonstration of silicide-like uniform and ultra-low specific contact resistivity using a metal/high-k/Si stack in a sidewall contact test structure
2014
VLSIT | Symposium on VLSI Technology
Kausik Majumdar
Robert D. Clark
T. Ngai
Kandabara Tapily
Steve Consiglio
E. Bersch
K. Matthews
E. Stinzianni
Ying Trickett
G.Nakamura
Cory Wajda
Gert Leusink
Hyuncher Chong
V. Kaushik
Joseph C. Woicik
C. Hobbs
P. D. Kirsch
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Citations (7)
Ultra low contact resistivity ( −8 Ω-cm 2 ) to In 0.53 Ga 0.47 As fin sidewall (110)/(100) surfaces: Realized with a VLSI processed III–V fin TLM structure fabricated with III–V on Si substrates
2014
IEDM | International Electron Devices Meeting
Rinus T. P. Lee
Y. Ohsawa
C. Huffman
Ying Trickett
G.Nakamura
C. Hatem
K.V. Rao
F. Khaja
Rong Lin
K. Matthews
Kathleen Dunn
Anders Jensen
T. Karpowicz
Peter Folmer Nielsen
E. Stinzianni
A. Cordes
P.Y. Hung
Dae-Hyun Kim
R.J.W. Hill
Wei-Yip Loh
C. Hobbs
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Citations (3)
Effective Schottky Barrier Height modulation using dielectric dipoles for source/drain specific contact resistivity improvement
2012
IEDM | International Electron Devices Meeting
K.-W. Ang
Kausik Majumdar
K. Matthews
Chadwin D. Young
C.R. Kenney
C. Hobbs
P. D. Kirsch
R. Jammy
Robert D. Clark
Steve Consiglio
Kandabara Tapily
Ying Trickett
G.Nakamura
Cory Wajda
Gert Leusink
Martin Rodgers
S. Gausepohl
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Citations (12)
Optimizing ALD HfO2 for Advanced Gate Stacks with Interspersed UV and Thermal Treatments- DADA and MDMA Variations, Combinations, and Optimization
2011
Robert D. Clark
Steven Consiglio
Genji Nakamura
Ying Trickett
Gert Leusink
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Citations (3)
EOT Scaling and Flatband Voltage Shift with Al Addition into TiN
2011
Genji Nakamura
Toshio Hasegawa
Steven Consiglio
Fumitaka Amano
Vinh Luong
Ying Trickett
Cory Wajda
Robert D. Clark
Gert Leusink
Kaoru Maekawa
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