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M. Y.L. Jung

University of Illinois at Urbana–Champaign

20

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334

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Measurement of photostimulated self-diffusion in silicon

2011 Journal of Applied Physics
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Mechanism and energetics of self-interstitial formation and diffusion in silicon

2007 Physical Review B
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A multiscale systems approach to microelectronic processes

2006 Computers & Chemical Engineering
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Measurement of defect-mediated diffusion: The case of silicon self-diffusion

2006 Aiche Journal
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Control of defect concentrations within a semiconductor through adsorption

2006 Physical Review Letters
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Interstitial charge states in boron-implanted silicon

2005 Journal of Applied Physics
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Measurement of nonthermal illumination-enhanced self-diffusion in silicon

2004 IWJT | International Workshop on Junction Technology
- M. Y.L. Jung
- Edmund G. Seebauer
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Optimal control of rapid thermal annealing in a semiconductor process

2004 Journal of Process Control
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Effect of near-surface band bending on dopant profiles in ion-implanted silicon

2004 Journal of Applied Physics
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Ramp-Rate Effects on Transient Enhanced Diffusion and Dopant Activation

2003 Journal of The Electrochemical Society
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Citations (22)