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M. Blaho
M. Blaho
Slovak Academy of Sciences
Leakage (electronics)
Heterojunction
Semiconductor
Optoelectronics
High-electron-mobility transistor
3
Papers
19
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GaAs Nanomembranes in the High Electron Mobility Transistor Technology
2021
Materials
Dagmar Gregušová
Edmund Dobročka
Peter Eliáš
Roman Stoklas
M. Blaho
O. Pohorelec
S. Hascik
Michal Kučera
Róbert Kúdela
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InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region
2019
Japanese Journal of Applied Physics
Dagmar Gregušová
Lajos Tóth
O. Pohorelec
Stanislav Hasenöhrl
S. Hascik
Ildikó Cora
Zsolt Fogarassy
R. Stoklas
A Seifertova
M. Blaho
Agáta Laurenčíková
Tatsuya Oyobiki
Bela Pecz
Tamotsu Hashizume
Jan Kuzmik
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Citations (2)
Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction
2017
Semiconductor Science and Technology
R. Stoklas
Dagmar Gregušová
M. Blaho
Karol Fröhlich
Jozef Novák
M. Matys
Zenji Yatabe
Peter Kordoš
Tamotsu Hashizume
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Citations (17)
1