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Hiroshi Ishimori
Hiroshi Ishimori
National Institute of Advanced Industrial Science and Technology
MOSFET
Trench
Analytical chemistry
Schottky barrier
Metal–semiconductor junction
2
Papers
28
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Evaluation of Schottky barrier height on 4H-SiC m-face for Schottky barrier diode wall integrated trench MOSFET
2017
Japanese Journal of Applied Physics
Yusuke Kobayashi
Hiroshi Ishimori
Akimasa Kinoshita
Takahito Kojima
Manabu Takei
Hiroshi Kimura
Shinsuke Harada
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Citations (20)
3.3 kV-Class 4H-SiC UMOSFET by Double-Trench with Tilt Angle Ion Implantation
2016
Materials Science Forum
Yusuke Kobayashi
Shinsuke Harada
Hiroshi Ishimori
Shinji Takasu
Takahito Kojima
Keiko Ariyoshi
Mitsuru Sometani
Junji Senzaki
Manabu Takei
Yasunori Tanaka
Hajime Okumura
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Citations (8)
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