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G. W. Smith

University of Oxford

7

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118

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Erratum: Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields [Phys. Rev. B 41 , 10754 (1990)]

1990 Physical Review B
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Stark-ladder behavior of the X levels in a type-II GaAs/AlAs superlattice measured using electroreflectance spectroscopy.

1990 Physical Review B
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Excitation mechanisms of photoluminescence in double-barrier resonant-tunneling structures.

1990 Physical Review B
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Resonant Raman scattering in GaAs/AlAs quantum wells

1990 Semiconductor Science and Technology
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Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields.

1990 Physical Review B
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Photoluminescence and photoluminescence excitation studies on GaAs/AlAs short period superlattices near the direct/indirect crossover

1989 Journal of Vacuum Science & Technology B
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