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Erin C. Jones

IBM

22

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High-resolution x-ray diffraction for characterization and monitoring of silicon-on-insulator fabrication processes

2003 Journal of Applied Physics
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Recent progress in devices and materials for CMOS technology

2003 VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
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Electrical characterization of germanium p-channel MOSFETs

2003 IEEE Electron Device Letters
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A PLANAR, SELF-ALIGNED, DOUBLE GATE MOSFET TECHNOLOGY

2003 IEEE Circuits & Devices
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Two gates are better than one [double-gate MOSFET process]

2003 IEEE Circuits & Devices
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Extreme scaling with ultra-thin Si channel MOSFETs

2002 IEDM | International Electron Devices Meeting
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Sub-30 nm P+ abrupt junction formation in strained Si/Si1-xGex MOS device

2002 IEDM | International Electron Devices Meeting
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Examination of hole mobility in ultra-thin body SOI MOSFETs

2002 IEDM | International Electron Devices Meeting
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Sub-30 nm P/sup +/ abrupt junction formation in strained Si/Si/sub 1-x/Ge/sub x/ MOS device

2002 IEDM | International Electron Devices Meeting
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Characterization and Monitoring of Silicon-on-Insulator Fabrication Processes by High-Resolution X-ray Diffraction

2002
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