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K. Barla

Centre national d'études des télécommunications

11

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Thin Dielectric Behavior and Boron Penetration under High Temperature H 2 SEG Prebake

1991 ESSDERC | European Solid-State Device Research Conference
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Plasma nitrided oxide films as a thin gate dielectric

1989 Applied Surface Science
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The kinetics and mechanism of oxide layer formation from porous silicon formed on p‐Si substrates

1987 Journal of Applied Physics
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Stress in oxidized porous silicon layers

1986 Journal of Applied Physics
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Microstructure of Porous silicon and its evolution with temperature

1984 Materials Letters
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Determination of lattice parameter and elastic properties of porous silicon by X-ray diffraction

1984 Journal of Crystal Growth
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Citations (184)