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Hao Tong

Huazhong University of Science and Technology

41

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329

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Experimental evidence for non-purely electric field-induced threshold switching and modified thermal-assisted model in GeTe phase change material

2021 Applied Physics Letters
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Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory

2021 Advanced electronic materials
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Characterizations of electronic and optical properties of Sb-based phase-change material stabilized by alloying Cr

2021 Applied Physics Letters
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A Behavioral Model of Digital Resistive Switching for Systems Level DNN Acceleration

2020 IEEE Transactions on Circuits and Systems Ii-express Briefs
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Magnetic Transition of Metallic Phase‐Change Materials

2020 Physica Status Solidi-rapid Research Letters
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Recent Advances on Neuromorphic Devices Based on Chalcogenide Phase‐Change Materials

2020 Advanced Functional Materials
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Stabilizing amorphous Sb by adding alien seeds for durable memory materials

2019 Physical Chemistry Chemical Physics
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Resistance Drift Suppression Utilizing GeTe/Sb2Te3 Superlattice‐Like Phase‐Change Materials

2019 Advanced electronic materials
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Strong interface scattering induced low thermal conductivity in Bi-based GeTe/Bi2Te3 superlattice-like materials

2019 RSC Advances
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Ultra-Low Program Current and Multilevel Phase Change Memory for High-Density Storage Achieved by a Low-Current SET Pre-Operation

2019 IEEE Electron Device Letters
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